IAUC120N06S5N017ATMA1 vs IAUC120N06S5L015ATMA1 对比

详细并排对比 IAUC120N06S5N017ATMA1 出自 Infineon 和 IAUC120N06S5L015ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IAUC120N06S5N017ATMA1 IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon

IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon

IAUC120N06S5N017ATMA1 ✓ 量产中
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ 量产中

规格对比

参数 IAUC120N06S5N017ATMA1 IAUC120N06S5L015ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $1.32 $0.92
Manufacturer Infineon Technologies —
Series OptiMOS 5 —
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 60 V 60 V
Continuous Drain Current (ID, Tc=25°C) 120 A —
Pulsed Drain Current (IDM) 757 A —
RDS(on) at VGS=10V 1.7 mΩ —
Gate-Source Threshold Voltage (VGS(th)) 3.4 V (typ) —
Total Gate Charge (Qg) at VGS=10V 95.9 nC —
Input Capacitance (Ciss) 6.952 nF —
Reverse Transfer Capacitance (Crss) 84 pF —
Output Capacitance (Coss) 1.507 nF —
Power Dissipation (PD, Tc=25°C) 167 W —
工作温度范围 -55°C to +175°C -55C to +175C (Tj)
封装 PG-TDSON-8-43 (TDSON-8 EP) PG-TDSON-8-43 (Surface Mount)
安装类型 Surface Mount Surface Mount (exposed pad)
AEC-Q101 Qualification Yes (Automotive Grade) —
MSL 等级 MSL1 (260°C peak reflow) [DATA_NEEDED: MSL level]
RoHS Compliance Green Product (RoHS compliant) —
Technology — N-Channel MOSFET (OptiMOS 5)
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Automotive Qualification — AEC-Q101 qualified
Gate-Source Voltage (VGS) max — ±20 V
RoHS 状态 — Compliant
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

数据手册与资源

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