IAUC120N06S5N017ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N017ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N017ATMA1
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΞ© OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N017ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.32 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 120 A | β |
| Pulsed Drain Current (IDM) | 757 A | β |
| RDS(on) at VGS=10V | 1.7 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | β |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | 35 nC |
| Input Capacitance (Ciss) | 6.952 nF | β |
| Reverse Transfer Capacitance (Crss) | 84 pF | 596 pF |
| Output Capacitance (Coss) | 1.507 nF | 2.128 nF |
| Power Dissipation (PD, Tc=25Β°C) | 167 W | β |
| Operating Temperature Range | -55Β°C to +175Β°C | β |
| Package | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | β |
| MSL Level | MSL1 (260Β°C peak reflow) | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Green Product (RoHS compliant) | β |
| Part Series | β | OptiMOS 6 |
| Configuration | β | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |
| Operating Junction Temperature | β | -55 C to +175 C |
| Automotive Qualification | β | AEC-Q101 (per part number suffix) |
| RoHS Status | β | Compliant |