IAUC120N06S5N017ATMA1 vs IAUC60N04S6L030HATMA1 Comparación
Comparación detallada lado a lado de IAUC120N06S5N017ATMA1 por Infineon y IAUC60N04S6L030HATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC120N06S5N017ATMA1 - 60V 120A 1.7mΩ OptiMOS 5 MOSFET | Infineon
IAUC120N06S5N017ATMA1 ✓ ActivoInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUC120N06S5N017ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,32 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 60 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 120 A | — |
| Pulsed Drain Current (IDM) | 757 A | — |
| RDS(on) at VGS=10V | 1.7 mΩ | — |
| Gate-Source Threshold Voltage (VGS(th)) | 3.4 V (typ) | — |
| Total Gate Charge (Qg) at VGS=10V | 95.9 nC | 35 nC |
| Input Capacitance (Ciss) | 6.952 nF | — |
| Reverse Transfer Capacitance (Crss) | 84 pF | 596 pF |
| Output Capacitance (Coss) | 1.507 nF | 2.128 nF |
| Power Dissipation (PD, Tc=25°C) | 167 W | — |
| Rango de temperatura de funcionamiento | -55°C to +175°C | — |
| Encapsulado | PG-TDSON-8-43 (TDSON-8 EP) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| AEC-Q101 Qualification | Yes (Automotive Grade) | — |
| Nivel MSL | MSL1 (260°C peak reflow) | 1 (per JEDEC J-STD-020) |
| RoHS Compliance | Green Product (RoHS compliant) | — |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| Temperatura de unión de funcionamiento | — | -55 C to +175 C |
| Automotive Qualification | — | AEC-Q101 (per part number suffix) |
| Estado RoHS | — | Compliant |