IAUC120N06S5N022ATMA1 vs IAUC60N10S5L110ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N022ATMA1 by Infineon and IAUC60N10S5L110ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N022ATMA1
IAUC120N06S5N022ATMA1 - 60V, 2.2mΞ© OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 β ActiveInfineon
IAUC60N10S5L110ATMA1
IAUC60N10S5L110ATMA1 - 100V 11mΞ© N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N022ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.68 | $0.66 |
| Drain-Source Voltage (VDS) | 60 V | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | β |
| Continuous Drain Current (ID) | 170 A (Tj) | β |
| On-Resistance RDS(on) max | 2.2 mΞ© at VGS=10 V | β |
| Power Dissipation (PD) | 136 W (Tc) | β |
| Operating Temperature Range | [DATA_NEEDED: TJ min/max] | [DATA_NEEDED: min/max operating temperature] |
| Package | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-33 (TDSON-8 Single) |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 trench | β |
| Channel Type | N-Channel | β |
| Pin Count | 8 (with exposed pad) | β |
| Automotive Qualification | AEC-Q101 | β |
| RoHS Status | Compliant | β |
| Halogen-Free | Yes (per Infineon product family convention) | Yes (per Infineon product classification) |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | β |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) @4.5V] | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOSβ’-5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | β | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | β | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | β | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | β | 11 mΞ© |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | β | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | β | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | β | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | β | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | β | Yes (RoHS compliant per LCSC listing) |
| Packing Code | β | ATMA1 (Tape & Reel) |
| MSL Level | β | 1 (per LCSC datasheet snippet) |
| Customer Info / FGR | β | J52 (per Infineon product data) |