IAUC120N06S5N022ATMA1 vs IAUC60N10S5L110ATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng IAUC120N06S5N022ATMA1 sa pamamagitan ng Infineon at IAUC60N10S5L110ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
IAUC120N06S5N022ATMA1 - 60V, 2.2mΩ OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N022ATMA1 ✓ NakahandaInfineon
IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon
IAUC60N10S5L110ATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | IAUC120N06S5N022ATMA1 | IAUC60N10S5L110ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Drain-Source Voltage (VDS) | 60 V | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max rating] | — |
| Continuous Drain Current (ID) | 170 A (Tj) | — |
| On-Resistance RDS(on) max | 2.2 mΩ at VGS=10 V | — |
| Power Dissipation (PD) | 136 W (Tc) | — |
| Hanay ng Temperature na Operasyon | [DATA_NEEDED: TJ min/max] | [DATA_NEEDED: min/max operating temperature] |
| Packhaging | PG-TDSON-8-34 (TDSON EP 5x6) | PG-TDSON-8-33 (TDSON-8 Single) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS-5 trench | — |
| Channel Type | N-Channel | — |
| Bilang ng Pin | 8 (with exposed pad) | — |
| Automotive Qualification | AEC-Q101 | — |
| Tindminan RoHS | Compliant | — |
| Wala sa Halogen | Yes (per Infineon product family convention) | Yes (per Infineon product classification) |
| Total Gate Charge (Qg) | [DATA_NEEDED: typical Qg] | — |
| RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) @4.5V] | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™-5 |
| Uri ng Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | — | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | — | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | — | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | — | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | — | 1.2 V |
| Gate-Source Voltage (V<sub>GS</sub>) Max | — | [DATA_NEEDED: VGS max rating] |
| Total Gate Charge (Q<sub>G</sub>) | — | [DATA_NEEDED: Qg at specified Vgs] |
| Avalanche Energy (E<sub>AS</sub>) | — | [DATA_NEEDED: single-pulse avalanche energy] |
| Lead-Free / RoHS | — | Yes (RoHS compliant per LCSC listing) |
| Packing Code | — | ATMA1 (Tape & Reel) |
| Level ng MSL | — | 1 (per LCSC datasheet snippet) |
| Customer Info / FGR | — | J52 (per Infineon product data) |