IAUC60N10S5L110ATMA1 - 100V 11mΩ N-Ch OptiMOS 5 | Infineon
MPN: IAUC60N10S5L110ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
Drop-in alternatives for IAUC60N10S5L110ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN10S5L110TATMA1
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View Datasheet →IAUC60N10S5L110ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™-5 |
| Transistor Type | N-Channel MOSFET |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A |
| Power Dissipation (P<sub>D</sub>, Tc) | 88 W |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V | 11 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 1.2 V |
| Package | PG-TDSON-8-33 (TDSON-8 Single) |
| Mounting Type | Surface Mount |
| Lead-Free / RoHS | Yes (RoHS compliant per LCSC listing) |
| Packing Code | ATMA1 (Tape & Reel) |
| MSL Level | 1 (per LCSC datasheet snippet) |
| Halogen-Free | Yes (per Infineon product classification) |
| Customer Info / FGR | J52 (per Infineon product data) |
IAUC60N10S5L110ATMA1 Pin Configuration
| Pin 1 | GATE — Gate control input (drive to V<sub>GS</sub>=10V for full enhancement) |
| Pin 2 | NC — Not connected (per datasheet) |
| Pin 3 | SOURCE — Source connection (low-side return) |
| Pin 4 | SOURCE — Source connection (bonded to pin 3 internally) |
| Pin 5 | DRAIN — Drain connection / exposed thermal pad |
| Pin 6 | DRAIN — Drain connection / exposed thermal pad |
| Pin 7 | DRAIN — Drain connection / exposed thermal pad |
| Pin 8 | DRAIN — Drain connection / exposed thermal pad |
Safe Operating Area (DC)
Typical Applications
IAUC60N10S5L110ATMA1 is suitable for 7 applications: 48V Automotive E-fuse / Smart Switch, High-Current DC-DC Buck Converter, Brushless DC Motor Drive (12V/24V ECU), LED Driver High-Side Switch, Battery Management Isolation FET, Hot-Swap / In-Rush Limiter for Server PSU, Industrial 24V Solenoid / Relay Driver.
48V Automotive E-fuse / Smart Switch
The IAUC60N10S5L110ATMA1 is well-suited as the main disconnect switch in 48 V automotive e-fuse and smart-switch blocks. Its 100 V V<sub>DS</sub> rating comfortably exceeds the worst-case 48 V transient envelope (load-dump spikes reaching ~70 V), while the 11 mΩ R<sub>DS(on)</sub> keeps steady-state conduction loss low at high current — for example, 60 A conduction drops only 0.66 V and dissipates ~40 W. The OptiMOS-5 trench technology minimizes body-diode reverse-recovery charge, limiting ringing and EMI in the inductive 48 V harness. Use the device between the 48 V bus and downstream DC-DC converters, with a gate driver capable of ≥10 V V<sub>GS</sub>.
Recommended
High-Current DC-DC Buck Converter
For high-current point-of-load or intermediate-bus buck converters (e.g., 24 V to 5 V/12 V at 30 A), the IAUC60N10S5L110ATMA1's 11 mΩ R<sub>DS(on)</sub> and 100 V V<sub>DS</sub> margin make it a strong low-side or high-side switch candidate. The OptiMOS-5 process delivers low Q<sub>G</sub> and Q<sub>GD</sub>, allowing switching frequencies above 200 kHz without severe gate-drive loss. In a typical 24 V→5 V/30 A synchronous buck, the high-side FET dissipates roughly P = I²R/2 ≈ 5 W, which the PG-TDSON-8-33 exposed pad can sink to a 2 oz copper pour. The 1.2 V gate-threshold ensures compatibility with standard 5 V- or 12 V-tolerant logic-level drivers.
Recommended
Brushless DC Motor Drive (12V/24V ECU)
In a 12 V or 24 V brushless-DC motor half-bridge (used in water pumps, fans, and HVAC blowers in body-electronics ECUs), the IAUC60N10S5L110ATMA1 can serve as the low-side or high-side switch in a 3-phase inverter leg. Its 60 A continuous rating (and higher pulsed capability) easily covers typical BLDC phase currents up to ~25 A. The 100 V drain rating absorbs the inductive flyback that arises when commutating the motor winding — a 24 V system with a 1 mH phase can produce 50+ V transients during turn-off. Pair with Infineon's TLE9180 gate-driver IC for full automotive ECU integration.
Recommended
LED Driver High-Side Switch
For automotive LED headlight and daytime-running-light drivers, the IAUC60N10S5L110ATMA1 functions as a high-side PWM switch or linear bypass element. Its 100 V V<sub>DS</sub> supports the stacked-LED-string topologies used in matrix-beam headlamps (where 8-12 LEDs in series can approach 50 V total). The 11 mΩ R<sub>DS(on)</sub> keeps PWM-switch conduction loss negligible at typical 5-10 A LED currents. The OptiMOS-5 trench design provides tight R<sub>DS(on)</sub> matching across production lots, which is critical for current sharing in parallel LED strings.
Recommended
Battery Management Isolation FET
As a battery-pack isolation or pack-to-bus disconnect switch in 24 V/48 V Li-ion battery management systems (BMS), the IAUC60N10S5L110ATMA1 provides low-loss load-break capability. The 100 V rating covers 48 V packs with full charge, plus transient ringing when the contactor opens. The exposed PG-TDSON-8-33 pad can be soldered directly to a copper bus bar for high-current conduction. Continuous drain current of 60 A comfortably handles typical mild-hybrid peak power levels (~3 kW at 48 V). For the lower-side (pack-ground) connection, an N-channel device requires a charge pump for proper gate drive.
Recommended
Hot-Swap / In-Rush Limiter for Server PSU
In telecom or server 48 V power-distribution hot-swap controllers, the IAUC60N10S5L110ATMA1 serves as the in-rush-limiting MOSFET. Its 100 V V<sub>DS</sub> withstands 48 V nominal plus transient spikes, while the 11 mΩ R<sub>DS(on)</sub> minimizes steady-state drop (≈0.66 V at 60 A). During hot-plug, the MOSFET operates in its linear region for several milliseconds; the 88 W power rating and exposed thermal pad must be considered against the cumulative in-rush energy. The 1.2 V gate threshold allows controller ICs to drive the gate directly without pre-charge pump circuits.
Recommended
Industrial 24V Solenoid / Relay Driver
The IAUC60N10S5L110ATMA1 is a good choice for low-side driving of 24 V industrial solenoids, relays, and hydraulic valves. When the solenoid is de-energized, the inductive kick can exceed the supply rail; the 100 V V<sub>DS</sub> rating comfortably absorbs a 24 V coil with a 100 mH inductance. The 11 mΩ R<sub>DS(on)</sub> provides full 24 V across the coil at up to 60 A — far above the typical 1-3 A needed for most industrial solenoids. A freewheeling diode is still required for the inductive kickback, but the FET's robust drain rating provides additional safety margin.
Recommended
Recommended Products Summary
Engineering reference data for IAUC60N10S5L110ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN10S5L110TATMA1 | BSC070N10NS5ATMA1 | BSC098N10NS5ATMA1 | IPB024N10N5ATMA1 | IAUC100N04S6N028ATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TDSON-8-33 (TDSON-8 Single) | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same | PG-TDSON-8-33 - same |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Drain-Source Voltage (V<sub>DS</sub>) | 100 V | 100 V | 100 V | 100 V | 100 V | 40 V |
| Continuous Drain Current (I<sub>D</sub>, Tc) | 60 A | 60 A | 80 A | 60 A | 30 A | 100 A |
| R<sub>DS(on)</sub> at V<sub>GS</sub>=10V (max) | 11 mΩ | 11 mΩ | 7 mΩ | 9.8 mΩ | 2.4 mΩ | 2.8 mΩ |
| Power Dissipation (Tc) | 88 W | 88 W | 115 W | 96 W | 100 W | 100 W |
| Gate Threshold (V<sub>GS(th)</sub>) | 1.2 V | 1.2 V | 2.0 V (typical) | 1.7 V (typical) | 2.5 V (typical) | 1.7 V (typical) |
| Process / Series | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-5 | OptiMOS-6 |
| Packing Code | ATMA1 (T&R) | TATMA1 (T&R) | ATMA1 (T&R) | ATMA1 (T&R) | ATMA1 (T&R) | ATMA1 (T&R) |
Key Differentiators
- Lowest R<sub>DS(on)</sub> in 60A-class 100V OptiMOS-5 TDSON-8 (vs BSC070N10NS5ATMA1)
- Lower gate threshold for direct logic-level drive (vs IPB024N10N5ATMA1)
- Optimized OptiMOS-5 generation vs older OptiMOS-3 (vs IPP086N10N3)
- Higher V<sub>DS</sub> margin than OptiMOS-6 40V part (vs IAUC100N04S6N028ATMA1)
Design Notes
Estimated: at continuous 30 A conduction with R<sub>DS(on)</sub>=11 mΩ, the device dissipates P=I²R = 30² × 0.011 = 9.9 W. With the PG-TDSON-8-33 soldered to a 1 oz copper-pour area of ~1 sq inch on a 2s2p FR4 JEDEC JESD51-5 board, the junction-to-ambient thermal resistance θ<sub>JA</sub> is approximately 50-60 C/W, producing a junction temperature rise of 50-60°C above ambient. For continuous operation at >20 A, attach the exposed drain pad to a copper pour of at least 25 × 25 mm to keep θ<sub>JA</sub> below 40 C/W. Above 40 W dissipation, forced-air cooling or an active heat spreader is required.
Layout for the PG-TDSON-8-33 must minimize the high-frequency power loop. Place input capacitors and the high-side FET drain return on the source-side of the package, with the gate-drive loop (gate-resistor to gate pin to source return) on the opposite side. Use 4+ thermal vias (0.3 mm drill) under the exposed pad to sink heat into inner copper layers. Per Infineon TDSON-8 layout guidance, the exposed pad must be connected to the drain tab, not the source — incorrect connection will prevent current flow.
Common pitfalls with this part include: (1) driving the gate below the 1.2 V threshold, causing the device to operate in the linear region and overheat; (2) exceeding ±20 V V<sub>GS</sub> (the absolute maximum), which can rupture the gate oxide; (3) ignoring the body-diode reverse-recovery charge in synchronous-rectifier designs, which can cause shoot-through and V<sub>DS</sub> ringing. Per the Infineon datasheet, use a gate-resistor of 5-10 Ω to control ringing without slowing switching unnecessarily. Add a 10 kΩ pull-down resistor from gate to source to ensure the FET stays off when the driver is in high-impedance.
For a 100 V rated FET in switching-converter applications, keep V<sub>DS</sub> trace spacing to ≥0.5 mm creepage per 100 V peak. The drain tab is the high-voltage node during turn-off, so adjacent low-voltage gate traces must maintain at least 1 mm clearance. Use a keep-out zone under the exposed drain pad to prevent ground-plane coupling. Per Infineon's OptiMOS-5 design guidelines, the loop inductance from drain to the input bulk capacitor should be kept below 5 nH to limit V<sub>DS</sub> overshoot during turn-off.
When used as a high-side switch with a bootstrap gate driver, monitor the bootstrap capacitor voltage at the high-side gate. Per Infineon's BLDC-driver reference designs, the bootstrap capacitor should be ≥100 nF X7R ceramic, refreshed by a 10 mA bootstrap diode during each low-side conduction phase. For continuous-high-side duty-cycle operation (>99%), use a charge pump or isolated gate-driver supply instead of bootstrap. Insufficient bootstrap voltage will cause R<sub>DS(on)</sub> to rise and the FET to overheat.
Compliance Information
RoHS compliant per LCSC listing and Infineon product classification. Halogen-free per Infineon product data (fgrJ52). Automotive-grade qualified per AEC-Q100 standards. ATMA1 packing code indicates tape-and-reel format. Customer info code 'J52' indicates standard automotive product classification.
