IAUC120N06S5N032ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUC120N06S5N032ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUC120N06S5N032ATMA1
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N032ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUC120N06S5N032ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.61 | $0.92 |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | β |
| Power Dissipation (PD) at TC=25C | 94 W | β |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm | β |
| Gate Charge (Qg) typ | 47 nC | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| Technology | OptiMOS-5 N-Channel | N-Channel MOSFET (OptiMOS 5) |
| Operating Temperature Range | -55C to +175C (Tj) | -55C to +175C (Tj) |
| Package | PG-TDSON-8-34 (SSO8 5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount (Tape and Reel) | Surface Mount (exposed pad) |
| Pin Count | 8 | β |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | β |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | β |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | β |
| Gate Resistance (Rg) | [DATA_NEEDED: Rg] | β |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| RoHS Status | Compliant | Compliant |
| MSL Level | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | β |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |