IAUC120N06S5N032ATMA1 vs IAUC120N06S5L015ATMA1 Comparaison
Comparaison détaillée côte à côte de IAUC120N06S5N032ATMA1 par Infineon et IAUC120N06S5L015ATMA1 par Infineon. Comparez les spécifications clés, les paramètres électriques, le conditionnement, le statut de cycle de vie, les prix et la disponibilité pour déterminer le meilleur composant pour vos exigences de conception.
Infineon
IAUC120N06S5N032ATMA1 - 60V 120A OptiMOS-5 N-MOSFET | Infineon
IAUC120N06S5N032ATMA1 ✓ ActifInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ ActifComparaison des spécifications
| Paramètre | IAUC120N06S5N032ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marque | Infineon | Infineon |
| Catégorie | MOSFETs | MOSFETs |
| Statut du cycle de vie | Actif | Actif |
| Statut du stock | In Stock | In Stock |
| Prix unitaire (USD) | $0,61 | $0,92 |
| Drain-Source Voltage (VDS) | 60 V | 60 V |
| Continuous Drain Current (ID) at TC=25C | 120 A | — |
| Power Dissipation (PD) at TC=25C | 94 W | — |
| On-Resistance RDS(on) max at VGS=10V | 3.2 mOhm | — |
| Gate Charge (Qg) typ | 47 nC | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| Technology | OptiMOS-5 N-Channel | N-Channel MOSFET (OptiMOS 5) |
| Plage de température de fonctionnement | -55C to +175C (Tj) | -55C to +175C (Tj) |
| Boîtier | PG-TDSON-8-34 (SSO8 5x6 mm) | PG-TDSON-8-43 (Surface Mount) |
| Type de montage | Surface Mount (Tape and Reel) | Surface Mount (exposed pad) |
| Nombre de broches | 8 | — |
| Input Capacitance (Ciss) | [DATA_NEEDED: Ciss] | — |
| Output Capacitance (Coss) | [DATA_NEEDED: Coss] | — |
| Reverse Recovery Charge (Qrr) | [DATA_NEEDED: Qrr] | — |
| Gate Resistance (Rg) | [DATA_NEEDED: Rg] | — |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 qualified |
| Statut RoHS | Compliant | Compliant |
| Niveau MSL | MSL 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL level] |
| Lead-Free | Yes | — |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |