IAUCN04S6N013TATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S6N013TATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S6N013TATMA1 - 40V N-Channel Automotive MOSFET | Infineon
IAUCN04S6N013TATMA1 ✓ ActiveInfineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN04S6N013TATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| FET Type | N-Channel | — |
| Drain-Source Voltage (V<sub>DS</sub>) | 40 V | — |
| Continuous Drain Current (I<sub>D</sub>) | 230 A at T<sub>C</sub> | — |
| R<sub>DS(on)</sub> (max) | 1.32 mΩ at V<sub>GS</sub> = 10 V | — |
| Power Dissipation (P<sub>D</sub>) | 133 W at T<sub>C</sub> | — |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.6 V (typ) | — |
| Total Gate Charge (Q<sub>g</sub>) | 52 nC at V<sub>GS</sub> = 10 V | — |
| Input Capacitance (C<sub>iss</sub>) | 1.08 nF | — |
| Output Capacitance (C<sub>oss</sub>) | 3.7 nF | — |
| Reverse Transfer Capacitance (C<sub>rss</sub>) | 51 pF | — |
| Operating Junction Temperature | -55 °C to +175 °C | -55 C to +175 C |
| Package | PG-LHDSO-10-1 (SSO10T) | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS Status | Compliant | Compliant |
| Manufacturer | — | Infineon Technologies |
| Part Series | — | OptiMOS 6 |
| Configuration | — | Half-Bridge (2 N-Channel) |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |
| MSL Level | — | 1 (per JEDEC J-STD-020) |