IAUCN04S7L014ATMA1 vs IPC100N04S5L1R5ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L014ATMA1 by Infineon and IPC100N04S5L1R5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN04S7L014ATMA1 | IPC100N04S5L1R5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.38 | $1.18 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 40V Automotive | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) | 120 A | β |
| On-Resistance RDS(on) Max | 1.43 mΞ© | β |
| Gate Threshold Voltage | [DATA_NEEDED: Gate threshold voltage] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: Total gate charge Qg] | β |
| Power Dissipation (Pd) | [DATA_NEEDED: Power dissipation Pd] | β |
| Operating Temperature Range | -55Β°C to +175Β°C (typical automotive MOSFET range) | -55C to +175C |
| Package | PG-TDSON-8-34 (TDSON EP, 8-pin) | PG-TDSON-8-34 (SS08 leadless) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | β |
| RoHS Status | Compliant | Compliant (Green Product) |
| MSL Level | 1 (per JEDEC J-STD-020) | MSL1 (260C peak reflow) |
| Configuration | Single N-Channel MOSFET | β |
| Product Family | β | OptiMOS-5 40 V |
| Polarity / Channel Type | β | N-Channel, Enhancement Mode |
| Drain-Source Voltage (VDS) Max | β | 40 V |
| Gate-Source Voltage (VGS) Max | β | 20 V |
| Continuous Drain Current (ID) at Tc=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM] |
| Power Dissipation (PD) at Tc=25C | β | 115 W |
| On-Resistance RDS(on) at VGS=10 V | β | 1.5 mOhm (typ) |
| On-Resistance RDS(on) at VGS=4.5 V | β | 1.8 mOhm (typ) |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ] |
| AEC-Q101 Qualified | β | Yes |
| Avalanche Tested | β | 100% |