IAUCN04S7L050HATMA1 vs IAUCN04S7L028ATMA1 Comparison
Detailed side-by-side comparison of IAUCN04S7L050HATMA1 by Infineon and IAUCN04S7L028ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN04S7L050HATMA1 - 40V Dual N-Ch OptiMOS 7, 5.04mΩ | Infineon
IAUCN04S7L050HATMA1 ✓ ActiveSpecification Comparison
| Parameter | IAUCN04S7L050HATMA1 | IAUCN04S7L028ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS™ 7 | OptiMOS 7 |
| Configuration | Dual N-Channel (Dual Drain, Half-Bridge) | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID), Tc=25°C | 65 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| On-Resistance RDS(on) max @ VGS=10V | 5.04 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | — |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge] | — |
| Power Dissipation (PD) @ Tc=25°C | 40 W | — |
| Operating Junction Temperature | -55 °C to +175 °C | -55 C to +175 C |
| Package | PG-TDSON-8-57 (SuperSO8 half-bridge) | PG-TDSON-8-33 (TDSON-8 EP) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Automotive Qualification | AEC-Q101 (family-level, automotive grade) | AEC-Q101 |
| Technology | Trench MOSFET, OptiMOS™ 7 40V | — |
| Transistor Type | — | N-Channel MOSFET |
| Continuous Drain Current (ID) | — | 100 A |
| On-State Resistance (RDS(on)) max | — | 2.80 mOhm at VGS=10 V |
| On-State Resistance (RDS(on)) | — | 2.82 mOhm at VGS=10 V (JLCPCB reported) |
| Gate-Source Threshold (VGS(th)) | — | 1.8 V (typ) |
| Gate Charge (Qg) | — | 24 nC at VGS=10 V |
| Input Capacitance (Ciss) | — | 1.578 nF |
| Output Capacitance (Coss) | — | 788 pF |
| Reverse Transfer Capacitance (Crss) | — | 36 pF |
| Power Dissipation (Ptot) | — | 58 W |