IAUCN04S7L050HATMA1 vs IAUCN04S7L028ATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN04S7L050HATMA1 dari Infineon dan IAUCN04S7L028ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN04S7L028ATMA1 IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 - 40V 100A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7L028ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN04S7L050HATMA1 IAUCN04S7L028ATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS™ 7 OptiMOS 7
Configuration Dual N-Channel (Dual Drain, Half-Bridge) —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID), Tc=25°C 65 A —
Pulsed Drain Current (IDM) [DATA_NEEDED: pulsed drain current] —
On-Resistance RDS(on) max @ VGS=10V 5.04 mΩ —
Gate-Source Voltage (VGS) max ±20 V —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge] —
Power Dissipation (PD) @ Tc=25°C 40 W —
Suhu Hubung Kerja -55 °C to +175 °C -55 C to +175 C
Paket PG-TDSON-8-57 (SuperSO8 half-bridge) PG-TDSON-8-33 (TDSON-8 EP)
Tipe Mounting Surface Mount Surface Mount
Level MSL 1 (per JEDEC J-STD-020) —
Status RoHS Compliant Compliant
Automotive Qualification AEC-Q101 (family-level, automotive grade) AEC-Q101
Technology Trench MOSFET, OptiMOS™ 7 40V —
Tipe Transistor — N-Channel MOSFET
Continuous Drain Current (ID) — 100 A
On-State Resistance (RDS(on)) max — 2.80 mOhm at VGS=10 V
On-State Resistance (RDS(on)) — 2.82 mOhm at VGS=10 V (JLCPCB reported)
Gate-Source Threshold (VGS(th)) — 1.8 V (typ)
Gate Charge (Qg) — 24 nC at VGS=10 V
Input Capacitance (Ciss) — 1.578 nF
Output Capacitance (Coss) — 788 pF
Reverse Transfer Capacitance (Crss) — 36 pF
Dissipasi Listrik (Ptot) — 58 W

Spek dan Sumber

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