IAUCN04S7N006TATMA1 vs IAUCN04S7L042GATMA1 Comparison

Detailed side-by-side comparison of IAUCN04S7N006TATMA1 by Infineon and IAUCN04S7L042GATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN04S7N006TATMA1

IAUCN04S7N006TATMA1 - 40V 425A OptiMOS 7 N-MOSFET | Infineon

IAUCN04S7N006TATMA1 βœ“ Active
Infineon
IAUCN04S7L042GATMA1

IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon

IAUCN04S7L042GATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN04S7N006TATMA1 IAUCN04S7L042GATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.66 $0.86
Polarity N-Channel β€”
Drain-Source Voltage (V_DS) 40 V β€”
Continuous Drain Current (I_D, T_j) 425 A β€”
Power Dissipation (P_D, T_C) 205 W β€”
R_DS(on) (typ, V_GS=10V) 0.63 mΞ© β€”
Technology OptiMOS 7 (shielded-gate trench) Trench N-Channel MOSFET
Package PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) PG-THSOG-4 (SSO4G 5x6) leaded surface mount
Mounting Type Surface Mount Surface Mount (IMS substrate / FR4 with thermal vias)
Operating Temperature Range [DATA_NEEDED: Tj min/max] -55C to +175C (Tj)
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) typical/min/max] β€”
Total Gate Charge (Q_G) [DATA_NEEDED: Q_G at V_GS=10V] β€”
Automotive Grade Yes (Infineon automotive MOSFET line) β€”
RoHS Status Compliant Compliant
MSL Level [DATA_NEEDED: MSL rating] 1
Lead-Free Yes β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 7 40V
Drain-Source Voltage (VDS) β€” 40 V
Continuous Drain Current (ID, Tj) β€” 77 A
Maximum Power Dissipation (PD, Tc) β€” 50 W
Polarity / Channel Type β€” N-Channel enhancement mode
Automotive Qualified β€” Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts)
Packing β€” Tape & Reel (per -ATMA1 suffix)
Target Substrate β€” IMS substrate and legacy FR4 designs
On-State Resistance RDS(on) β€” [DATA_NEEDED: RDS(on) max @ VGS=10V]
Gate Threshold Voltage VGS(th) β€” [DATA_NEEDED: VGS(th) typical/min/max]
Total Gate Charge Qg β€” [DATA_NEEDED: Qg @ VGS=10V]

Datasheets & Resources

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