IAUCN04S7N006TATMA1 vs IAUCN04S7L042GATMA1 Perbandingan
Perbandingan bersamaan detil IAUCN04S7N006TATMA1 dari Infineon dan IAUCN04S7L042GATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IAUCN04S7L042GATMA1 - 40V 77A OptiMOS 7 N-MOSFET, PG-THSOG-4 | Infineon
IAUCN04S7L042GATMA1 ✓ AktifPerbandingan Spesifikasi
| Parameter Umum | IAUCN04S7N006TATMA1 | IAUCN04S7L042GATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Polarity | N-Channel | — |
| Drain-Source Voltage (V_DS) | 40 V | — |
| Continuous Drain Current (I_D, T_j) | 425 A | — |
| Power Dissipation (P_D, T_C) | 205 W | — |
| R_DS(on) (typ, V_GS=10V) | 0.63 mΩ | — |
| Technology | OptiMOS 7 (shielded-gate trench) | Trench N-Channel MOSFET |
| Paket | PG-LHDSO-10-3 (10-LSOP, 5.30 mm width, exposed pad) | PG-THSOG-4 (SSO4G 5x6) leaded surface mount |
| Tipe Mounting | Surface Mount | Surface Mount (IMS substrate / FR4 with thermal vias) |
| Rentang Suhu Kerja | [DATA_NEEDED: Tj min/max] | -55C to +175C (Tj) |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) typical/min/max] | — |
| Total Gate Charge (Q_G) | [DATA_NEEDED: Q_G at V_GS=10V] | — |
| Automotive Grade | Yes (Infineon automotive MOSFET line) | — |
| Status RoHS | Compliant | Compliant |
| Level MSL | [DATA_NEEDED: MSL rating] | 1 |
| Lead-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Product Family | — | OptiMOS 7 40V |
| Drain-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID, Tj) | — | 77 A |
| Maximum Power Dissipation (PD, Tc) | — | 50 W |
| Polarity / Channel Type | — | N-Channel enhancement mode |
| Automotive Qualified | — | Yes (Automotive grade, AEC-Q101 expected for Infineon OptiMOS 7 automotive parts) |
| Packing | — | Tape & Reel (per -ATMA1 suffix) |
| Target Substrate | — | IMS substrate and legacy FR4 designs |
| On-State Resistance RDS(on) | — | [DATA_NEEDED: RDS(on) max @ VGS=10V] |
| Gate Threshold Voltage VGS(th) | — | [DATA_NEEDED: VGS(th) typical/min/max] |
| Total Gate Charge Qg | — | [DATA_NEEDED: Qg @ VGS=10V] |