IAUCN08S7L033ATMA1 vs IAUA220N08S5N021AUMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L033ATMA1 by Infineon and IAUA220N08S5N021AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L033ATMA1
IAUCN08S7L033ATMA1 - 80V 3.3mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUCN08S7L033ATMA1 β ActiveInfineon
IAUA220N08S5N021AUMA1
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L033ATMA1 | IAUA220N08S5N021AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.86 | $2.45 |
| Manufacturer | Infineon Technologies | β |
| Series | Automotive OptiMOS 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 80 V | β |
| Maximum On-Resistance (RDS(on)) at VGS=10V | 3.3 mΞ© | β |
| Continuous Drain Current (ID) at Tj | 130 A | β |
| Continuous Drain Current (ID) at Tc=25Β°C | [DATA_NEEDED: ID at Tc=25C] | β |
| Power Dissipation (PD) at Tc=25Β°C | 118 W | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | β |
| Gate-Source Voltage (VGS) max | Β±20 V (typical Infineon OptiMOS 7 limit) | β |
| Operating Temperature Range | -55Β°C to +175Β°C (TJ) | -55C to +175C (Tj) |
| Package | PG-TDSON-8-34 (SSO8, 5x6 mmΒ²) | PG-HSOF-5-4 (7x8 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | Automotive Grade (per Infineon datasheet header) | β |
| Technology | OptiMOS 7 trench MOSFET | OptiMOS-5 (75V-120V family) |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, typical for this package) | [DATA_NEEDED: MSL moisture sensitivity level] |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tj) | β | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | β | 2.1 mΞ© at 10 V V_GS |
| Power Dissipation (P_D, Tc) | β | 211 W |
| Gate-Source Voltage (V_GS max) | β | [DATA_NEEDED: V_GS max absolute rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Channel Type | β | N-Channel |
| Automotive Qualification | β | AEC-Q101 qualified |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g typical at V_GS=10V] |
| Output Capacitance (C_oss) | β | [DATA_NEEDED: C_oss typical] |
| Thermal Resistance (R_thJC) | β | [DATA_NEEDED: junction-to-case thermal resistance] |