IAUCN08S7L110ATMA1 vs IAUCN10S5L110TATMA1 Comparison
Detailed side-by-side comparison of IAUCN08S7L110ATMA1 by Infineon and IAUCN10S5L110TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN08S7L110ATMA1
IAUCN08S7L110ATMA1 - 80V 11mΞ© N-Channel MOSFET | Infineon
IAUCN08S7L110ATMA1 β ActiveInfineon
IAUCN10S5L110TATMA1
IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
IAUCN10S5L110TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN08S7L110ATMA1 | IAUCN10S5L110TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.46 | $2.08 |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 80 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) | 50 A | β |
| Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) | 58 W | β |
| R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) | 11 mΞ© | β |
| Gate-Source Voltage (V<sub>GS</sub>) max | [DATA_NEEDED: V_GS_max] | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | [DATA_NEEDED: V_GS_th] | β |
| Total Gate Charge (Q<sub>G</sub>) | [DATA_NEEDED: Q_G_total] | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 Β°C to +175 Β°C |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Technology | OptiMOSβ’ (Trench) | N-Channel MOSFET, Trench, Logic Level |
| MSL Level | [DATA_NEEDED: MSL level] | MSL1 (260Β°C peak reflow) |
| RoHS Status | Compliant | Compliant |
| Automotive Qualified | Yes (AEC-Q101 expected per family) | β |
| Polarity | Single N-Channel | β |
| Configuration | Single | β |
| Manufacturer | β | Infineon Technologies |
| Series | β | OptiMOS 5 |
| Drain-Source Voltage (VDS) | β | 100 V |
| Continuous Drain Current (ID) at Tj | β | 61 A |
| On-Resistance RDS(on) max at VGS=10V | β | 11.3 mΞ© |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: gate-source voltage rating] |
| Power Dissipation (PD) at Tc | β | 88 W |
| Storage Temperature | β | [DATA_NEEDED: storage temperature] |
| Avalanche Rated | β | 100% Avalanche Tested |
| Automotive Qualification | β | AEC-Q101 Extended Qualification |