IAUCN10S5L110TATMA1 - 100V 61A OptiMOS 5 N-Ch MOSFET | Infineon
MPN: IAUCN10S5L110TATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $3.42 | $3.42 |
| 10 | $3.07 | $30.70 |
| 100 | $2.65 | $265.00 |
| 500 | $2.31 | $1,155.00 |
| 1,000 | $2.08 | $2,080.00 |
Drop-in alternatives for IAUCN10S5L110TATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IAUCN10S5L080TATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN10S5L140TATMA1
✅ Drop-In📋 Reference alternative (not in catalog)
IAUCN10S7L290TATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$0.36 / Unit
View Datasheet →IPB024N10N5ATMA1
✅ Drop-In ⚠️ 参数待验证✓ In Stock
$1.86 / Unit
View Datasheet →IAUCN10S5L110TATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS 5 |
| Technology | N-Channel MOSFET, Trench, Logic Level |
| Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) at Tj | 61 A |
| On-Resistance RDS(on) max at VGS=10V | 11.3 mΩ |
| Power Dissipation (PD) at Tc | 88 W |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled |
| Mounting Type | Surface Mount |
| MSL Level | MSL1 (260°C peak reflow) |
| Avalanche Rated | 100% Avalanche Tested |
| Automotive Qualification | AEC-Q101 Extended Qualification |
| RoHS Status | Compliant |
IAUCN10S5L110TATMA1 Pin Configuration
| Pin 1 | Gate — Gate control input, logic-level drive (10V VGS for full enhancement) |
| Pin 2 | Source — Source connection (low-side switch terminal) |
| Pin 3 | Source — Source connection (low-side switch terminal) |
| Pin 4 | Source — Source connection (low-side switch terminal) |
| Pin 5 | Source — Source connection (low-side switch terminal) |
| Pin 6 | Source — Source connection (low-side switch terminal) |
| Pin 7 | Source — Source connection (low-side switch terminal) |
| Pin 8 | Source — Source connection (low-side switch terminal) |
| Pin 9 | Source — Source connection (low-side switch terminal) |
| Pin 10 | Drain — Drain connection (high-side switch terminal, exposed on top of package for cooling) |
Safe Operating Area
Typical Applications
IAUCN10S5L110TATMA1 is suitable for 6 applications: Automotive 48V Mild-Hybrid DC-DC Converter, Electric Power Steering (EPS) Motor Drive, xEV Battery Management System (BMS) Discharge Switch, Telecom 48V Intermediate Bus Converter, Industrial Brushless DC (BLDC) Motor Drive, Solar Inverter Maximum Power Point Tracker (MPPT).
Automotive 48V Mild-Hybrid DC-DC Converter
The IAUCN10S5L110TATMA1 fits automotive 48 V mild-hybrid DC-DC converters because its 100 V VDS rating provides 50% headroom above the 48 V nominal bus, absorbing load-dump transients up to 80 V without avalanche breakdown. The 11.3 mΩ maximum RDS(on) at 61 A conduction keeps conduction losses under 40 W per switch at full load, allowing high-efficiency bidirectional conversion between 48 V and 12 V rails. Its top-side cooled SSO10T 5x7 package enables direct cold-plate attachment, which is critical in z-axis-constrained under-hood modules where PCB copper area is limited. AEC-Q101 extended qualification and 175°C Tj rating support reliable operation in engine-bay thermal environments up to 105°C ambient.
Recommended
Electric Power Steering (EPS) Motor Drive
EPS motor drives benefit from the IAUCN10S5L110TATMA1's 11.3 mΩ on-resistance and 61 A continuous current capability, which directly translate to lower I²R losses and cooler operation in three-phase inverter legs switching at 20 kHz PWM. The SSO10T 5x7 top-side cooled package is preferred in column-mounted EPS units where the PCB is enclosed in a tubular housing and cannot dissipate heat through the bottom copper layer. Logic-level gate drive (full enhancement at 10 V VGS) simplifies interface to 12 V automotive MCUs without requiring a dedicated gate-drive IC. AEC-Q101 qualification is mandatory for safety-critical steering systems governed by ISO 26262 ASIL-D.
Recommended
xEV Battery Management System (BMS) Discharge Switch
Battery management systems use the IAUCN10S5L110TATMA1 as a low-side discharge or precharge switch because its 100 V rating handles the maximum pack voltage of 96 V xEV battery systems with adequate margin. The 11.3 mΩ RDS(on) at 100 A discharge current dissipates only ~110 W, manageable with the top-side cooled SSO10T attached to the BMS housing. Reverse-battery protection circuits leverage the body diode (with appropriate avalanche rating) to clamp inductive transients during relay transitions. AEC-Q101 and extended reliability testing are essential for the 10-15 year service life requirement of traction battery systems.
Recommended
Telecom 48V Intermediate Bus Converter
Telecom 48 V intermediate bus converters (IBCs) benefit from the IAUCN10S5L110TATMA1's 100 V VDS rating with margin for telecom transient voltage spec (100 V surge). The 11.3 mΩ RDS(on) enables higher conversion efficiency at the 30-50 A load currents typical of IBC stages feeding downstream point-of-load converters. Top-side cooled SSO10T package enables direct cold-plate integration in 1U rack-mounted equipment where bottom-side cooling is occupied by other components. Logic-level gate drive simplifies interface to standard telecom PWM controllers running from 12 V bias.
Recommended
Industrial Brushless DC (BLDC) Motor Drive
Industrial BLDC motor drives up to 3 kW use the IAUCN10S5L110TATMA1 in three-phase inverter topologies where its 61 A continuous drain current supports motors drawing peak phase currents of 40-50 A. The 11.3 mΩ RDS(on) keeps conduction losses below 3% of output power at 48 V bus, maintaining drive efficiency above 96%. The 175°C maximum junction temperature supports industrial ambient ratings up to 85°C without active cooling. The 100 V VDS rating is well-matched to 48 V and 72 V industrial battery systems used in AGVs and material-handling equipment.
Recommended
Solar Inverter Maximum Power Point Tracker (MPPT)
Solar inverter MPPT stages benefit from the IAUCN10S5L110TATMA1 as a synchronous rectifier in 60-cell panel strings with open-circuit voltages up to 50 V. The 100 V VDS rating absorbs transient spikes from long DC cable inductance during MOSFET turn-off. The 11.3 mΩ RDS(on) minimizes conduction loss in continuous-conduction-mode (CCM) operation at 20-30 A typical MPPT current. Top-side cooled SSO10T enables compact inverter designs where PCB bottom-side cooling surfaces are minimal, and AEC-Q101 reliability testing provides long-term robustness for outdoor installations exposed to thermal cycling.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN10S5L110TATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN10S5L080TATMA1 | IAUCN10S5L140TATMA1 | IAUCN10S7L290TATMA1 | IPB024N10N5ATMA1 |
|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies |
| Package | PG-LHDSO-10-1 (SSO10T 5x7) | PG-LHDSO-10-1 (SSO10T 5x7) - same | PG-LHDSO-10-1 (SSO10T 5x7) - same | PG-LHDSO-10-1 (SSO10T 5x7) - same | PG-LHDSO-10-1 (SSO10T 5x7) - same |
| Drain-Source Voltage (VDS) | 100 V | 100 V | 100 V | [DATA_NEEDED] | 100 V |
| Continuous Drain Current (ID) | 61 A | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| On-Resistance RDS(on) max | 11.3 mΩ | 8 mΩ | 14 mΩ | 29 mΩ | 2.4 mΩ |
| Power Dissipation (PD) at Tc | 88 W | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Operating Junction Temperature | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C | -55 °C to +175 °C |
| Automotive Qualification | AEC-Q101 Extended | AEC-Q101 Extended | AEC-Q101 Extended | AEC-Q101 | AEC-Q101 |
| Mounting Type | Surface Mount (Top-Side Cooled) | Surface Mount (Top-Side Cooled) | Surface Mount (Top-Side Cooled) | Surface Mount (Top-Side Cooled) | Surface Mount (Top-Side Cooled) |
Key Differentiators
- Top-side cooled SSO10T 5x7 package with RthJC approximately 0.9°C/W (vs Standard SO-8 MOSFETs (RthJA approximately 50-80°C/W))
- 100 V VDS rating with logic-level gate drive (vs Standard 100V MOSFETs requiring 10V VGS drive at VGS(th)=3-4V)
- AEC-Q101 extended qualification with 100% avalanche testing (vs Commercial-grade MOSFETs (no AEC-Q101 qualification))
Design Notes
Estimated: at 30 A continuous drain current and 11.3 mΩ RDS(on), conduction loss is approximately P=I²R = 30² × 0.0113 = 10.2 W. With the SSO10T top-side cooled package (RthJC approximately 0.9°C/W) attached to a cold plate (Rth = 1°C/W), junction temperature rise above cold plate is approximately 10.2 × 0.9 = 9.2°C. Without top-side cooling, the device relies on PCB copper (RthJA approximately 50°C/W) and will thermally limit at much lower currents. Always attach a thermal interface material (TIM) and cold plate for full 61 A capability.
The SSO10T 5x7 package has the drain exposed on the top side rather than the bottom PCB land pattern. Do not place a thermal via array under the package; instead, route source connections through the side leads and use the top-side drain tab for heatsink attachment. Place the gate-drive loop as compact as possible - keep the gate driver within 5 mm of the gate pin and use a 1 Ω series gate resistor to dampen parasitic ringing. A 10 kΩ gate-source pull-down resistor is recommended to prevent unintended turn-on during MCU reset.
Do not confuse the IAUCN10S5L110T (bare part) with the IAUCN10S5L110TATMA1 (tape-and-reel). The ATMA1 suffix is the ordering code, not a specification variant. Also note that the PG-LHDSO-10-1 (SSO10T 5x7) package is Infineon-proprietary - cross-brand drop-in equivalents in this exact footprint are extremely rare, so any second-source typically requires PCB redesign to a different package such as DPAK or DFN5x6.
Switching losses in 100V MOSFETs at 20-50 kHz PWM can create significant EMI from drain-source dv/dt and di/dt. Use a snubber network (typically 10 Ω + 1 nF RC across drain-source) to slow the switching edge in EMI-sensitive applications, or adopt gate-drive impedance control (2-10 Ω gate resistor) to balance switching loss against EMI. For automotive applications subject to CISPR 25 Class 5 EMI compliance, gate-drive impedance tuning is essential.
Compliance Information
RoHS compliant and halogen-free per Infineon datasheet. AEC-Q101 qualified with extended reliability testing. MSL1 rated up to 260°C peak reflow per JEDEC J-STD-020.
