IAUCN08S7L110ATMA1 vs IAUCN10S5L110TATMA1 Perbandingan

Perbandingan bersamaan detil IAUCN08S7L110ATMA1 dari Infineon dan IAUCN10S5L110TATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
IAUCN08S7L110ATMA1 IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 - 80V 11mΩ N-Channel MOSFET | Infineon

IAUCN08S7L110ATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum IAUCN08S7L110ATMA1 IAUCN10S5L110TATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 80 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>j</sub>) 50 A —
Maximum Power Dissipation (P<sub>D</sub>, T<sub>C</sub>) 58 W —
R<sub>DS(on)</sub> (typ., V<sub>GS</sub>=10 V) 11 mΩ —
Gate-Source Voltage (V<sub>GS</sub>) max [DATA_NEEDED: V_GS_max] —
Gate Threshold Voltage (V<sub>GS(th)</sub>) [DATA_NEEDED: V_GS_th] —
Total Gate Charge (Q<sub>G</sub>) [DATA_NEEDED: Q_G_total] —
Suhu Hubung Kerja -55 °C to +175 °C -55 °C to +175 °C
Paket PG-TDSON-8-34 (TDSON-8) PG-LHDSO-10-1 (SSO10T 5x7), Top-Side Cooled
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS™ (Trench) N-Channel MOSFET, Trench, Logic Level
Level MSL [DATA_NEEDED: MSL level] MSL1 (260°C peak reflow)
Status RoHS Compliant Compliant
Automotive Qualified Yes (AEC-Q101 expected per family) —
Polarity Single N-Channel —
Configuration Single —
Manufacturer — Infineon Technologies
Series — OptiMOS 5
Drain-Source Voltage (VDS) — 100 V
Continuous Drain Current (ID) at Tj — 61 A
On-Resistance RDS(on) max at VGS=10V — 11.3 mΩ
Gate-Source Voltage (VGS) — [DATA_NEEDED: gate-source voltage rating]
Power Dissipation (PD) at Tc — 88 W
Storage Temperature — [DATA_NEEDED: storage temperature]
Avalanche Rated — 100% Avalanche Tested
Automotive Qualification — AEC-Q101 Extended Qualification

Spek dan Sumber

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