IAUCN10S5L280DATMA1 vs IAUC120N06S5L015ATMA1 Comparison

Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IAUCN10S5L280DATMA1

IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon

IAUCN10S5L280DATMA1 βœ“ Active
Infineon
IAUC120N06S5L015ATMA1

IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 βœ“ Active

Specification Comparison

Parameter IAUCN10S5L280DATMA1 IAUC120N06S5L015ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $1.62 $0.92
Manufacturer Infineon Technologies β€”
Product Family OptiMOS 5 β€”
Configuration Dual N-Channel MOSFET Array β€”
Drain-Source Voltage (Vds) 100 V β€”
Continuous Drain Current (Id) at Tj 23 A β€”
Power Dissipation (Pd) at Tc 38 W β€”
Package PG-TDSON-8-61 (SSO8) PG-TDSON-8-43 (Surface Mount)
Mounting Type Surface Mount Surface Mount (exposed pad)
Automotive Qualified Yes (AEC-Q101, IAU prefix) β€”
Technology OptiMOS 5 Trench MOSFET N-Channel MOSFET (OptiMOS 5)
Operating Temperature Range -55C to +175C (junction) -55C to +175C (Tj)
Pin Count 8 β€”
MSL Level 1 [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Packing Tape & Reel (T&R) β€”
Drain-Source Voltage (VDS) β€” 60 V
Continuous Drain Current (ID, Tc=25C) β€” 235 A
On-Resistance RDS(on) max (VGS=10 V) β€” 1.5 mΞ©
Gate Charge (Qg, typ) β€” 88 nC
Power Dissipation (PD, Tc=25C) β€” 167 W
Automotive Qualification β€” AEC-Q101 qualified
Gate-Source Voltage (VGS) max β€” Β±20 V
Drain-Source On-State Resistance Test Conditions β€” VGS = 10 V, ID = 50 A
Typical Application β€” Automotive DC-DC, battery switches, motor drives

Datasheets & Resources

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