IAUCN10S5L280DATMA1 vs IAUCN10S7L290TATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S5L280DATMA1 by Infineon and IAUCN10S7L290TATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S5L280DATMA1
IAUCN10S5L280DATMA1 - 100V Dual N-Ch OptiMOS 5 MOSFET | Infineon
IAUCN10S5L280DATMA1 β ActiveInfineon
IAUCN10S7L290TATMA1
IAUCN10S7L290TATMA1 - 100V 27A OptiMOS 7 Auto MOSFET | Infineon
IAUCN10S7L290TATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S5L280DATMA1 | IAUCN10S7L290TATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.62 | $0.36 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 | OptiMOSβ’ 7 |
| Configuration | Dual N-Channel MOSFET Array | β |
| Drain-Source Voltage (Vds) | 100 V | β |
| Continuous Drain Current (Id) at Tj | 23 A | β |
| Power Dissipation (Pd) at Tc | 38 W | β |
| Package | PG-TDSON-8-61 (SSO8) | PG-LHDSO-10-1 (SSO10T 5x7 mm) - top-side cooled |
| Mounting Type | Surface Mount | Surface Mount |
| Automotive Qualified | Yes (AEC-Q101, IAU prefix) | β |
| Technology | OptiMOS 5 Trench MOSFET | β |
| Operating Temperature Range | -55C to +175C (junction) | β |
| Pin Count | 8 | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant | β |
| Packing | Tape & Reel (T&R) | β |
| Transistor Type | β | N-Channel MOSFET |
| Drain-Source Voltage (VDS) | β | 100 V |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: VGS max rating] |
| Continuous Drain Current (ID) at TC=25Β°C | β | 27 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: IDM pulse rating] |
| On-Resistance RDS(on) max @ VGS=10V | β | 28.6 mΞ© |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5 V] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg typical] |
| Power Dissipation (PD) at TC=25Β°C | β | 45 W |
| Operating Junction Temperature | β | -55 Β°C to +175 Β°C |
| Automotive Qualification | β | AEC-Q100 qualified |
| RoHS Compliance | β | Compliant |
| Lead-Free | β | Yes |
| Avalanche Rated | β | Yes |
| ESD Protection | β | HBM Class 1C (per Infineon datasheet) |