IAUCN10S7L180ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUCN10S7L180ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUCN10S7L180ATMA1
IAUCN10S7L180ATMA1 - 100V 39A 18mΞ© Automotive MOSFET | Infineon
IAUCN10S7L180ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUCN10S7L180ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.58 | $0.92 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 7 | β |
| Transistor Type | N-Channel MOSFET | β |
| Number of Channels | 1 | β |
| Maximum Drain-Source Voltage (VDS) | 100 V | β |
| Continuous Drain Current (ID, Tj) | 39 A | β |
| Power Dissipation (PD, Tc=25Β°C) | 58 W | β |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΞ© @ VGS=10 V | β |
| Typical RDS(on) | 18 mΞ© | β |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V | β |
| Maximum Gate-Source Voltage (VGS) | Β±20 V (Β±16 V per JLCPCB listing) | β |
| Total Gate Charge (Qg) | 11 nC | β |
| Input Capacitance (Ciss) | 272 pF | β |
| Output Capacitance (Coss) | 668 pF | β |
| Reverse Transfer Capacitance (Crss) | 7 pF | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-TDSON-8-34 (Surface Mount) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| Automotive Qualified | Yes | β |
| RoHS Status | EU RoHS Compliant with Exemption | Compliant |
| Configuration | Single Quad Drain Triple Source | β |
| Channel Mode | Enhancement | β |
| Part Status | Active | β |
| Technology | β | N-Channel MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Automotive Qualification | β | AEC-Q101 qualified |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |