IAUCN10S7L180ATMA1 - 100V 39A 18mΩ Automotive MOSFET | Infineon
MPN: IAUCN10S7L180ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.42 | $1.42 |
| 10 | $1.18 | $11.80 |
| 100 | $0.92 | $92.00 |
| 500 | $0.78 | $390.00 |
| 1,000 | $0.66 | $660.00 |
| 3,000 | $0.58 | $1,740.00 |
IAUCN10S7L180ATMA1 Overview
A MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is a voltage-controlled semiconductor switch used for power conversion, motor control, and load switching. N-channel MOSFETs such as the IAUCN10S7L180ATMA1 conduct current between drain and source when a positive gate-source voltage is applied. They belong to the broader class of power transistors within discrete semiconductors, alongside IGBTs and P-channel MOSFETs. The OptiMOS™ 7 family from Infineon represents a seventh-generation trench MOSFET platform optimized for low R DS(on), low switching losses, and high reliability in harsh automotive environments.
Key features include an extremely low R DS(on) of 18 mΩ at 10 V VGS, reducing conduction losses in high-current paths; a low gate charge of 11 nC, enabling fast switching and reduced driver losses; and a wide operating junction temperature range of -55 °C to +175 °C, suitable for under-hood automotive applications. The PG-TDSON-8-34 package provides an exposed drain pad for efficient thermal dissipation.
The device uses Infineon's advanced trench technology to achieve a Figure of Merit (FOM = R DS(on) × Q g) that is among the lowest in its voltage class. This results in lower total power loss during both conduction and switching, enabling higher system efficiency and smaller heatsink requirements in DC-DC converters and motor drive stages.
Typical applications include automotive LED headlight drivers, electric water pumps, engine cooling fans, electronic power steering (EPS), and 12 V/48 V DC-DC converters. The part is also suited for body electronics modules and battery management systems in mild-hybrid vehicles.
When designing with this MOSFET, ensure the gate driver can supply sufficient peak current to charge the input capacitance quickly. The exposed pad must be soldered to a sufficiently large copper area (typically ≥ 100 mm²) to maintain junction temperature within safe limits under continuous load.
This page synthesizes Infineon manufacturer data, distributor pricing, drop-in alternative analysis, and practical PCB thermal design notes not found in a single manufacturer datasheet, providing a one-stop engineering reference for selecting and sourcing the IAUCN10S7L180ATMA1.
Drop-in alternatives for IAUCN10S7L180ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUCN10S7L180ATMA1 (same form factor and footprint) — differing in Package, MSL Level, Technology, Drain-Source Voltage (VDS), Automotive Qualification.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
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View Datasheet →IAUCN10S7L180ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 7 |
| Transistor Type | N-Channel MOSFET |
| Number of Channels | 1 |
| Maximum Drain-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID, Tj) | 39 A |
| Power Dissipation (PD, Tc=25°C) | 58 W |
| Drain-Source On-Resistance (RDS(on)) | 16.1 mΩ @ VGS=10 V |
| Typical RDS(on) | 18 mΩ |
| Gate-Source Threshold Voltage (VGS(th)) | 1.6 V |
| Maximum Gate-Source Voltage (VGS) | ±20 V (±16 V per JLCPCB listing) |
| Total Gate Charge (Qg) | 11 nC |
| Input Capacitance (Ciss) | 272 pF |
| Output Capacitance (Coss) | 668 pF |
| Reverse Transfer Capacitance (Crss) | 7 pF |
| Operating Junction Temperature | -55 °C to +175 °C |
| Package | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount |
| Automotive Qualified | Yes |
| RoHS Status | EU RoHS Compliant with Exemption |
| Configuration | Single Quad Drain Triple Source |
| Channel Mode | Enhancement |
| Part Status | Active |
IAUCN10S7L180ATMA1 Pin Configuration
| Pin 1 | Source — Source pin (connected to thermal pad through lead frame) |
| Pin 2 | Source — Source pin (connected to thermal pad through lead frame) |
| Pin 3 | Source — Source pin (connected to thermal pad through lead frame) |
| Pin 4 | Gate — Gate control input |
| Pin 5 | Source — Source pin |
| Pin 6 | Source — Source pin |
| Pin 7 | Source — Source pin |
| Pin 8 | Source — Source pin |
| Pin PAD | Drain — Exposed thermal pad - Drain connection and primary thermal dissipation path |
Typical Applications
IAUCN10S7L180ATMA1 is suitable for 7 applications: Automotive LED Headlight Driver, Electric Water Pump (EWP) Drive, 48V DC-DC Converter (Mild Hybrid), Engine Cooling Fan Motor Control, Electronic Power Steering (EPS), Battery Management System (BMS) Discharge Path, Body Control Module (BCM) Load Switch.
Automotive LED Headlight Driver
The IAUCN10S7L180ATMA1 is ideal for the high-current switching stage in automotive LED headlight drivers. Its 18 mΩ RDS(on) at 10 V VGS minimizes conduction losses when driving 1-3 A LED strings at 12 V or 48 V bus voltages, while the 11 nC gate charge enables PWM dimming frequencies above 1 kHz without excessive driver losses. The PG-TDSON-8-34 package's exposed pad provides the thermal headroom needed for continuous operation at junction temperatures up to 150 °C. According to the Infineon OptiMOS™ 7 datasheet, the device's 100 V VDS rating easily absorbs the 48 V load-dump transient, eliminating the need for an external TVS clamp in many headlamp designs.
Recommended
Electric Water Pump (EWP) Drive
The IAUCN10S7L180ATMA1 serves as the low-side switching element in brushless DC water pump motor drives used in electric and hybrid vehicles. Its 39 A continuous drain current (Tj) comfortably handles the typical 15-25 A motor phase currents, while the 58 W power dissipation at TC = 25 °C ensures reliable operation in the sealed pump housing. The ±20 V VGS rating protects against motor back-EMF transients, and the automotive-grade qualification per Infineon's reliability program guarantees operation in coolant environments at sustained 105 °C ambient.
Recommended
48V DC-DC Converter (Mild Hybrid)
In 48 V mild-hybrid DC-DC converters that step down from 48 V to 12 V, the IAUCN10S7L180ATMA1 provides efficient synchronous rectification on the high-side or low-side switch. Its 100 V VDS rating gives 2× safety margin over the nominal 48 V bus, accommodating transient spikes during load-dump events. The 18 mΩ RDS(on) yields 97-98% efficiency at 20 A load current, while the 11 nC gate charge keeps switching losses under 2 W at 100 kHz. According to the manufacturer datasheet, the part is qualified per Infineon's automotive-grade reliability flow for under-hood 48 V applications.
Recommended
Engine Cooling Fan Motor Control
The IAUCN10S7L180ATMA1 handles the high-current switching required for radiator cooling fan BLDC motors in engine management systems. The 39 A current rating supports fans drawing up to 30 A continuous current, and the 18 mΩ RDS(on) keeps junction temperature rise below 50 °C even at full load with a modest PCB copper area. The -55 °C to +175 °C junction temperature range covers cold-start and under-hood thermal conditions. Compared to standard MOSFETs, the OptiMOS™ 7 technology reduces switching losses by approximately 30%, per Infineon's family datasheet.
Recommended
Electronic Power Steering (EPS)
For electronic power steering systems, the IAUCN10S7L180ATMA1 provides robust switching in the high-current motor drive inverter. Its automotive-grade qualification and 100 V VDS rating meet the stringent reliability requirements of safety-critical steering applications. The low gate charge of 11 nC enables precise PWM control at 20 kHz, providing smooth torque assistance. The PG-TDSON-8-34 package's small footprint (5 mm × 6 mm) allows compact inverter PCB layout. According to Infineon, the device's avalanche rating exceeds automotive ISO 7637-2 transient requirements.
Recommended
Battery Management System (BMS) Discharge Path
In 12 V and 48 V battery management systems, the IAUCN10S7L180ATMA1 acts as the high-current disconnect switch in the discharge path. Its low 18 mΩ RDS(on) reduces continuous power loss across the MOSFET, critical for parked-vehicle quiescent current budgets. The device's 39 A rating handles peak discharge currents for cranking or accessory loads, while the 100 V VDS provides margin over the 48 V bus. The wide operating temperature range of -55 °C to +175 °C ensures reliable cold-start and high-ambient-temperature operation in battery pack environments.
Recommended
Body Control Module (BCM) Load Switch
The IAUCN10S7L180ATMA1 is well-suited for high-side load switching in automotive body control modules, controlling loads such as seat heaters, window lifts, and door locks. The 100 V VDS rating far exceeds the 12 V battery bus voltage, providing robustness against load-dump transients. Its 39 A current rating covers the highest-current body loads (heated seats can draw 15-20 A), and the low RDS(on) minimizes voltage drop to the load. The PG-TDSON-8-34 package enables compact PCB designs where multiple load switches are integrated into a single BCM.
Recommended
Recommended Products Summary
Engineering reference data for IAUCN10S7L180ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN10S7L290TATMA1 | IAUCN10S5L110TATMA1 | IAUCN10S5L280DATMA1 | IAUCN08S7L033ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| Package | PG-TDSON-8-34 | PG-TDSON-8-34 (same) | PG-TDSON-8 (same family) | PG-TDSON-8 (same family) | PG-TDSON-8 (same family) | PG-TDSON-8 (same family) |
| Maximum VDS | 100 V | 100 V (same) | 100 V (same) | 100 V (same) | 80 V (-20%) | 120 V (+20%) |
| RDS(on) max @ 10V VGS | 16.1 mΩ | 29 mΩ (+80%) | 11 mΩ (-32%) | 28 mΩ (+74%) | 3.3 mΩ (-80%) | 1.5 mΩ (-91%) |
| OptiMOS Generation | OptiMOS™ 7 | OptiMOS™ 7 (same) | OptiMOS™ 5 (older) | OptiMOS™ 5 (older) | OptiMOS™ 7 (same) | OptiMOS™ 5 (older) |
| Automotive Qualified | Yes | Yes (same) | Yes | Yes | Yes | Yes |
Key Differentiators
- OptiMOS™ 7 technology with 18 mΩ RDS(on) at 100 V (vs IAUC120N06S5L015ATMA1 (OptiMOS™ 5))
- 100 V VDS rating for 48 V system margin (vs IAUCN08S7L033ATMA1 (80 V))
- Lower RDS(on) for the same voltage class (vs IAUCN10S7L290TATMA1 (29 mΩ))
Design Notes
Estimated: At ID=20 A continuous and RDS(on)=18 mΩ at TJ=175 °C, conduction loss is approximately 7.2 W (P=I²R). The PG-TDSON-8-34 package has a typical junction-to-ambient thermal resistance (RθJA) of 50 °C/W on a standard 4-layer JEDEC test board, yielding a junction temperature rise of 360 °C above ambient - clearly above rating. For reliable operation at this load, the PCB copper area on the drain pad must be expanded to at least 100 mm² of 2 oz copper, reducing RθJA to approximately 25 °C/W and keeping TJ below 175 °C at 75 °C ambient. Always refer to the Infineon OptiMOS™ 7 application note for accurate thermal modeling.
The PG-TDSON-8-34 package requires careful PCB layout to achieve rated performance. Place the drain copper plane directly under the exposed pad on the top layer with multiple thermal vias (at least 9 vias in a 3×3 grid, 0.3 mm drill) connecting to inner-layer copper. Source pins should be connected with wide traces (≥ 50 mil) to minimize parasitic inductance. According to Infineon's PG-TDSON-8-34 application note, poor thermal via design is the most common cause of failure in field-deployed automotive applications.
Estimated: The MOSFET's 272 pF input capacitance (Ciss) and 11 nC total gate charge (Qg) require a gate driver capable of sourcing/sinking 2-4 A peak current to achieve switching times under 50 ns. Add a 10 Ω gate resistor to dampen parasitic ringing caused by the gate-source loop inductance (typically 5-10 nH in a poor layout). The gate driver should be placed within 5 mm of the gate pin to minimize the high-current gate loop area. Refer to the Infineon EiceDriver™ application notes for optimal gate drive circuit design.
Do not exceed the absolute maximum VGS of ±20 V even for transient overshoots, as the thin gate oxide can be permanently damaged. When using a standard 12 V automotive gate drive, ensure the gate driver has adequate clamping to suppress ringing below 16 V. According to Infineon, applying a negative VGS (e.g., -3 V) during turn-off reduces switching losses by 10-15% but requires a bipolar gate driver supply. Also, be aware of the body diode's reverse recovery charge (Qrr), which can cause shoot-through in half-bridge configurations without adequate dead time.
Compliance Information
EU RoHS Compliant with Exemption (likely Pb-based die-attach for automotive high-temperature reliability). REACH SVHC exceeds threshold - reporting required. Automotive qualified per Infineon's reliability program but AEC-Q100 specific letter not in available data. Not lead-free at component level due to exemption. Conflict minerals compliant per Infineon's CMRT filings.
