IAUT300N08S5N014ATMA1 vs IAUC120N06S5L015ATMA1 Comparison
Detailed side-by-side comparison of IAUT300N08S5N014ATMA1 by Infineon and IAUC120N06S5L015ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUT300N08S5N014ATMA1
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΞ© N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 β ActiveInfineon
IAUC120N06S5L015ATMA1
IAUC120N06S5L015ATMA1 - 60V 1.5mΞ© OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 β ActiveSpecification Comparison
| Parameter | IAUT300N08S5N014ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.05 | $0.92 |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at TC=25Β°C | 300 A (DC) | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Gate-Source Voltage (VGS) Max | Β±20 V (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | β |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΞ© | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation PD @ TC=25Β°C | 300 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | β |
| Package | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TDSON-8-43 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount (exposed pad) |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at β€30 Β°C / 85 % RH) | β |
| Peak Reflow Temperature | 260 Β°C | β |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100 % (per Infineon datasheet) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Technology Family | OptiMOS 5 (Infineon) | β |
| Technology | β | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | β | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | β | 1.5 mΞ© |
| Gate Charge (Qg, typ) | β | 88 nC |
| Power Dissipation (PD, Tc=25C) | β | 167 W |
| Operating Temperature Range | β | -55C to +175C (Tj) |
| Gate-Source Voltage (VGS) max | β | Β±20 V |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | β | VGS = 10 V, ID = 50 A |
| Typical Application | β | Automotive DC-DC, battery switches, motor drives |