IAUT300N08S5N014ATMA1 vs IAUC120N06S5L015ATMA1 Vergleich
Detaillierter Direktvergleich von IAUT300N08S5N014ATMA1 von Infineon und IAUC120N06S5L015ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon
IAUT300N08S5N014ATMA1 ✓ AktivInfineon
IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon
IAUC120N06S5L015ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IAUT300N08S5N014ATMA1 | IAUC120N06S5L015ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $3,05 | $0,92 |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 80 V | 60 V |
| Continuous Drain Current (ID) at TC=25°C | 300 A (DC) | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Gate-Source Voltage (VGS) Max | ±20 V (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th)] | — |
| On-Resistance RDS(on) typ @ VGS=10V | 1.4 mΩ | — |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation PD @ TC=25°C | 300 W | — |
| Betriebs-Sperrschichttemperatur | -55 °C to +175 °C | — |
| Gehäuse | PG-HSOF-8-1 (8-pin + tab, Surface Mount) | PG-TDSON-8-43 (Surface Mount) |
| Montageart | Surface Mount | Surface Mount (exposed pad) |
| MSL (Moisture Sensitivity Level) | MSL1 (unlimited floor life at ≤30 °C / 85 % RH) | — |
| Peak Reflow Temperature | 260 °C | — |
| Automotive Qualification | AEC-Q101 | AEC-Q101 qualified |
| Avalanche Tested | 100 % (per Infineon datasheet) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Technology Family | OptiMOS 5 (Infineon) | — |
| Technology | — | N-Channel MOSFET (OptiMOS 5) |
| Continuous Drain Current (ID, Tc=25C) | — | 235 A |
| On-Resistance RDS(on) max (VGS=10 V) | — | 1.5 mΩ |
| Gate Charge (Qg, typ) | — | 88 nC |
| Power Dissipation (PD, Tc=25C) | — | 167 W |
| Betriebstemperaturbereich | — | -55C to +175C (Tj) |
| Gate-Source Voltage (VGS) max | — | ±20 V |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Drain-Source On-State Resistance Test Conditions | — | VGS = 10 V, ID = 50 A |
| Typical Application | — | Automotive DC-DC, battery switches, motor drives |