IAUT300N08S5N014ATMA1 vs IAUC120N06S5L015ATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng IAUT300N08S5N014ATMA1 sa pamamagitan ng Infineon at IAUC120N06S5L015ATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
IAUT300N08S5N014ATMA1 IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N014ATMA1 - 80V 300A 1.4mΩ N-Ch MOSFET | Infineon

IAUT300N08S5N014ATMA1 ✓ Nakahanda
Infineon
IAUC120N06S5L015ATMA1 IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 - 60V 1.5mΩ OptiMOS 5 N-MOSFET | Infineon

IAUC120N06S5L015ATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro IAUT300N08S5N014ATMA1 IAUC120N06S5L015ATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel, Enhancement Mode —
Drain-Source Voltage (VDS) 80 V 60 V
Continuous Drain Current (ID) at TC=25°C 300 A (DC) —
Pulsed Drain Current (IDM) [DATA_NEEDED: IDM] —
Gate-Source Voltage (VGS) Max ±20 V (typ) —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th)] —
On-Resistance RDS(on) typ @ VGS=10V 1.4 mΩ —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max] —
Power Dissipation PD @ TC=25°C 300 W —
Temperature ng Junction na Operasyon -55 °C to +175 °C —
Packhaging PG-HSOF-8-1 (8-pin + tab, Surface Mount) PG-TDSON-8-43 (Surface Mount)
Uri ng Pagpapasok Surface Mount Surface Mount (exposed pad)
MSL (Moisture Sensitivity Level) MSL1 (unlimited floor life at ≤30 °C / 85 % RH) —
Peak Reflow Temperature 260 °C —
Automotive Qualification AEC-Q101 AEC-Q101 qualified
Avalanche Tested 100 % (per Infineon datasheet) —
RoHS Compliance Compliant (Green Product) —
Technology Family OptiMOS 5 (Infineon) —
Technology — N-Channel MOSFET (OptiMOS 5)
Continuous Drain Current (ID, Tc=25C) — 235 A
On-Resistance RDS(on) max (VGS=10 V) — 1.5 mΩ
Gate Charge (Qg, typ) — 88 nC
Power Dissipation (PD, Tc=25C) — 167 W
Hanay ng Temperature na Operasyon — -55C to +175C (Tj)
Gate-Source Voltage (VGS) max — ±20 V
Tindminan RoHS — Compliant
Level ng MSL — [DATA_NEEDED: MSL level]
Drain-Source On-State Resistance Test Conditions — VGS = 10 V, ID = 50 A
Typical Application — Automotive DC-DC, battery switches, motor drives

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