IAUTN04S7N005ATMA1 vs IAUC60N04S6L030HATMA1 Comparison
Detailed side-by-side comparison of IAUTN04S7N005ATMA1 by Infineon and IAUC60N04S6L030HATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN04S7N005ATMA1
IAUTN04S7N005ATMA1 - 40V 0.44mΞ© OptiMOS 7 N-MOSFET | Infineon
IAUTN04S7N005ATMA1 β ActiveInfineon
IAUC60N04S6L030HATMA1
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN04S7N005ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.22 | $0.94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOSβ’7 (40 V, Automotive) | β |
| Technology | N-Channel Trench MOSFET | β |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25Β°C) | 350 A | β |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΞ© | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Power Dissipation (Tc=25Β°C) | 218 W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55 C to +175 C |
| Package | PG-HSOF-8-8 (TOLL) 10 Γ 12 mm | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Half-Bridge (2 N-Channel) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS Status | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) | β |
| MSL Level | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | 1 (per JEDEC J-STD-020) |
| Gate Charge (Qg typ.) | [DATA_NEEDED: Qg at VGS=10V] | β |
| Total Gate Charge Figure of Merit (FOM) | [DATA_NEEDED: FOM = RDS(on) Γ Qg] | β |
| Part Series | β | OptiMOS 6 |
| Continuous Drain Current (ID) at TJ | β | 60 A |
| On-Resistance R_DS(on) at VGS=10V | β | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | β | 35 nC |
| Output Capacitance (Coss) | β | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | β | 596 pF |
| Gate Threshold Voltage (VGS(th)) | β | 2 V |
| Maximum Power Dissipation (PD) at TC | β | 75 W |