IAUTN04S7N005ATMA1 vs IAUC60N04S6L030HATMA1 Comparación
Comparación detallada lado a lado de IAUTN04S7N005ATMA1 por Infineon y IAUC60N04S6L030HATMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IAUTN04S7N005ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,22 | $0,94 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™7 (40 V, Automotive) | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 350 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Disipación de potencia (TC=25°C) | 218 W | — |
| Temperatura de unión de funcionamiento | -55 °C to +175 °C | -55 C to +175 C |
| Encapsulado | PG-HSOF-8-8 (TOLL) 10 × 12 mm | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Half-Bridge (2 N-Channel) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| Estado RoHS | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) | — |
| Nivel MSL | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | 1 (per JEDEC J-STD-020) |
| Gate Charge (Qg typ.) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Total Gate Charge Figure of Merit (FOM) | [DATA_NEEDED: FOM = RDS(on) × Qg] | — |
| Part Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |