IAUTN04S7N005ATMA1 vs IAUC60N04S6L030HATMA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma IAUTN04S7N005ATMA1 tarafından Infineon ve IAUC60N04S6L030HATMA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Infineon
IAUC60N04S6L030HATMA1 - 40V 60A OptiMOS Half-Bridge | Infineon
IAUC60N04S6L030HATMA1 ✓ AktifÖzellik Karşılaştırması
| Parametre | IAUTN04S7N005ATMA1 | IAUC60N04S6L030HATMA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS™7 (40 V, Automotive) | — |
| Technology | N-Channel Trench MOSFET | — |
| Drain-Source Voltage (VDS) | 40 V | 40 V |
| Continuous Drain Current (ID, Tc=25°C) | 350 A | — |
| On-State Resistance RDS(on) max @ VGS=10V | 0.44 mΩ | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Güç Tüketimi (TC=25°C) | 218 W | — |
| İşletim Jant Sıcaklığı | -55 °C to +175 °C | -55 C to +175 C |
| Paket | PG-HSOF-8-8 (TOLL) 10 × 12 mm | PG-TDSON-8-56 (TDSON-8, 5 mm x 6 mm) |
| Montaj Türü | Surface Mount | Surface Mount |
| Configuration | Single N-Channel | Half-Bridge (2 N-Channel) |
| Automotive Qualification | AEC-Q101 | AEC-Q101 (per part number suffix) |
| RoHS Durumu | Compliant | Compliant |
| Lead-Free / Halogen-Free | Yes (per manufacturer datasheet) | — |
| MSL Seviyesi | [DATA_NEEDED: MSL level per JEDEC J-STD-020] | 1 (per JEDEC J-STD-020) |
| Gate Charge (Qg typ.) | [DATA_NEEDED: Qg at VGS=10V] | — |
| Total Gate Charge Figure of Merit (FOM) | [DATA_NEEDED: FOM = RDS(on) × Qg] | — |
| Part Series | — | OptiMOS 6 |
| Continuous Drain Current (ID) at TJ | — | 60 A |
| On-Resistance R_DS(on) at VGS=10V | — | 3.0 mOhm (typical) |
| Total Gate Charge (Qg) at VGS=10V | — | 35 nC |
| Output Capacitance (Coss) | — | 2.128 nF |
| Reverse Transfer Capacitance (Crss) | — | 596 pF |
| Gate Threshold Voltage (VGS(th)) | — | 2 V |
| Maximum Power Dissipation (PD) at TC | — | 75 W |