IAUTN12S5N017ATMA1 vs BSC019N04LSTATMA1 Comparison
Detailed side-by-side comparison of IAUTN12S5N017ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IAUTN12S5N017ATMA1
IAUTN12S5N017ATMA1 - 120V 1.7mΞ© N-Channel OptiMOS 5 MOSFET | Infineon
IAUTN12S5N017ATMA1 β ActiveInfineon
BSC019N04LSTATMA1
BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon
BSC019N04LSTATMA1 β ActiveSpecification Comparison
| Parameter | IAUTN12S5N017ATMA1 | BSC019N04LSTATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.83 | $1.21 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOSβ’ 5 | β |
| FET Type | N-Channel | β |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V | β |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25Β°C) | 314 A | β |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΞ© | β |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) | β |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) | β |
| Maximum Junction Temperature | 175 Β°C | β |
| Operating Temperature Range | -55 Β°C to +175 Β°C (junction) | -55 C to +150 C |
| Package | PG-HSOF-8-1 (HSOF-8, surface mount) | TDSON-8 (SuperSO8) 5x6 mm |
| Mounting Type | Surface Mount | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts | β |
| Technology | OptiMOS 5 trench MOSFET | OptiMOS 5 (N-channel trench MOSFET) |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) | β |
| RoHS Status | Compliant (per distributor listings) | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020, by package) | 1 (unlimited) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID, Tc=25C) | β | 161 A |
| Continuous Drain Current (ID, Ta=25C) | β | 28 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed ID limit] |
| On-Resistance RDS(on) max @ VGS=10V | β | 1.9 mOhm |
| On-Resistance RDS(on) max @ VGS=4.5V | β | [DATA_NEEDED: RDS(on) at 4.5V] |
| Gate Threshold Voltage VGS(th) typ | β | 1.7 V |
| Total Gate Charge Qg typ | β | 85 nC |
| Power Dissipation PD (Tc=25C) | β | 94 W |
| Lead-Free / Halogen-Free | β | Yes / Yes |
| Avalanche Rated | β | Yes |