IAUTN12S5N017ATMA1 vs BSC019N04LSTATMA1 对比

详细并排对比 IAUTN12S5N017ATMA1 出自 Infineon 和 BSC019N04LSTATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
BSC019N04LSTATMA1 BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 - 40V N-Ch OptiMOS 5 Power MOSFET | Infineon

BSC019N04LSTATMA1 ✓ 量产中

规格对比

参数 IAUTN12S5N017ATMA1 BSC019N04LSTATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.83 $1.21
Manufacturer Infineon Technologies —
Series OptiMOS™ 5 —
FET Type N-Channel —
Drain-Source Voltage (V<sub>DS</sub>) 120 V —
Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) 314 A —
On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) 1.7 mΩ —
Gate Threshold Voltage (V<sub>GS(th)</sub>) 2.5 V typical (range per datasheet) —
Gate Charge (Q<sub>g</sub>) per datasheet curve (typ. ~150 nC class) —
Maximum Junction Temperature 175 °C —
工作温度范围 -55 °C to +175 °C (junction) -55 C to +150 C
封装 PG-HSOF-8-1 (HSOF-8, surface mount) TDSON-8 (SuperSO8) 5x6 mm
安装类型 Surface Mount Surface Mount
Mounting Position Kelvin source pin (pin 2) for high-frequency layouts —
Technology OptiMOS 5 trench MOSFET OptiMOS 5 (N-channel trench MOSFET)
Qualification Automotive grade (per Infineon part page, AEC-Q101 expected for the family) —
RoHS 状态 Compliant (per distributor listings) Compliant
MSL 等级 1 (per JEDEC J-STD-020, by package) 1 (unlimited)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

数据手册与资源

浏览全部产品 创建 BOM 获取报价