IAUTN12S5N017ATMA1 - 120V 1.7mΩ N-Channel OptiMOS 5 MOSFET | Infineon
MPN: IAUTN12S5N017ATMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.42 | $7.42 |
| 10 | $6.68 | $66.80 |
| 100 | $5.94 | $594.00 |
| 500 | $5.39 | $2,695.00 |
| 1,000 | $4.83 | $4,830.00 |
IAUTN12S5N017ATMA1 Overview
An N-channel power MOSFET is a voltage-controlled majority-carrier device whose drain current is modulated by the gate-source voltage V<sub>GS</sub>. Once V<sub>GS</sub> exceeds the threshold voltage (typically 2-4 V), a conductive channel forms in the drift region, allowing current to flow from drain to source. The IAUTN12S5N017 belongs to the OptiMOS 5 120 V family, which sits in the broader N-channel MOSFET -> power MOSFET -> discrete semiconductor -> semiconductor taxonomy. The OptiMOS 5 generation uses a trench-gate technology optimised for low R<sub>DS(on)</sub> * figure-of-merit (FOM) and improved switching performance versus prior generations.
Key specifications include R<sub>DS(on)</sub>_max of 1.7 mΩ at V<sub>GS</sub>=10 V, continuous drain current of 314 A at 25 °C case, gate charge Q<sub>g</sub> characterised up to 100 A pulsed drain current, and 175 °C maximum junction temperature. The HSOF-8 package features a large exposed source pad that doubles as the electrical source connection and as a low-thermal-resistance heatsink path, enabling the device to handle high currents on FR4 boards without an external heatsink.
Architecturally, the device uses Infineon's latest-generation trench cell, which minimises both the on-state resistance and the gate-charge capacitance. Compared with the previous OptiMOS 4 generation, this typically yields ~30% lower conduction losses and faster switching at the same R<sub>DS(on)</sub> rating, allowing higher switching frequencies in DC-DC converters and therefore smaller magnetics.
Typical applications include 48 V-12 V HV-LV DC-DC converters in mild-hybrid (48 V) automotive systems, telecom and server intermediate bus converters, high-current motor drives, hot-swap / OR-ing switches in 48 V backplanes, and battery protection / load disconnect circuits. The 120 V drain-source rating provides ample headroom above 48 V nominal buses (with switching transients reaching ~70-80 V).
When designing with this part, place the gate-drive resistor within 5 mm of the gate pad and use a Kelvin-source connection (pin 2 in HSOF-8) to avoid source-inductance-induced gate-oscillation. A gate-drive voltage of 8-10 V is recommended for full enhancement into the 1.7 mΩ region; 4.5 V drive degrades R<sub>DS(on)</sub> significantly.
This page synthesises distributor pricing, drop-in alternatives, and practical thermal design notes not collected in any single manufacturer or distributor product page.
Drop-in alternatives for IAUTN12S5N017ATMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IAUTN12S5N017ATMA1 (same form factor and footprint) — differing in Package, Operating Temperature Range, MSL Level, Technology, Mounting Type.
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View Datasheet →IAUTN12S5N017ATMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Series | OptiMOS™ 5 |
| FET Type | N-Channel |
| Drain-Source Voltage (V<sub>DS</sub>) | 120 V |
| Continuous Drain Current (I<sub>D</sub>, T<sub>C</sub>=25°C) | 314 A |
| On-Resistance (R<sub>DS(on)</sub>, V<sub>GS</sub>=10 V) | 1.7 mΩ |
| Gate Threshold Voltage (V<sub>GS(th)</sub>) | 2.5 V typical (range per datasheet) |
| Gate Charge (Q<sub>g</sub>) | per datasheet curve (typ. ~150 nC class) |
| Maximum Junction Temperature | 175 °C |
| Operating Temperature Range | -55 °C to +175 °C (junction) |
| Package | PG-HSOF-8-1 (HSOF-8, surface mount) |
| Mounting Type | Surface Mount |
| Mounting Position | Kelvin source pin (pin 2) for high-frequency layouts |
| Technology | OptiMOS 5 trench MOSFET |
| Qualification | Automotive grade (per Infineon part page, AEC-Q101 expected for the family) |
| RoHS Status | Compliant (per distributor listings) |
| MSL Level | 1 (per JEDEC J-STD-020, by package) |
IAUTN12S5N017ATMA1 Pin Configuration
| Pin 1 | G — Gate - gate drive input; tie to gate-driver output through gate resistor |
| Pin 2 | KS — Kelvin Source (sense) - return for gate driver; suppresses source-inductance ringing |
| Pin 3 | S — Source (electrical/thermal) |
| Pin 4 | S — Source (electrical/thermal) |
| Pin 5 | S — Source (electrical/thermal) |
| Pin 6 | S — Source (electrical/thermal) |
| Pin 7 | S — Source (electrical/thermal) |
| Pin 8 | S — Source (electrical/thermal) |
Safe Operating Area (DC, T_C = 25°C)
Typical Applications
IAUTN12S5N017ATMA1 is suitable for 6 applications: 48V Mild-Hybrid HV-LV DC-DC Converter, Telecom and Server Intermediate Bus Converter (IBC), High-Current Motor Drive / H-Bridge Switch, 48V Hot-Swap / OR-ing Switch, Battery Disconnect / Load Switch in 48V Systems, Industrial High-Current Synchronous Rectifier.
48V Mild-Hybrid HV-LV DC-DC Converter
The IAUTN12S5N017ATMA1 is a primary switch candidate for 48 V to 12 V automotive HV-LV DC-DC converters used in 48 V mild-hybrid electrical systems. Its 120 V V<sub>DS</sub> rating covers worst-case 48 V bus transients with substantial margin, and the 1.7 mΩ R<sub>DS(on)</sub> at V<sub>GS</sub>=10 V minimises conduction loss in the high-current primary-side bridge. The HSOF-8 package's exposed source pad provides direct PCB-copper heatsinking, enabling 200-300 A peak switching currents without an external heatsink. Designers should target a switching frequency of 100-200 kHz to balance magnetics size against switching losses, and place the gate drive within 5 mm of pin 1 (Gate) using the pin 2 Kelvin source for the gate-driver return path to suppress source-inductance-induced ringing.
Recommended
Telecom and Server Intermediate Bus Converter (IBC)
In 48 V telecom and hyperscale server intermediate bus converters, the IAUTN12S5N017ATMA1 can serve as the primary-side high-voltage switch in a fixed-ratio LLC or hard-switched buck topology converting 48 V to a 12 V or 6 V intermediate bus. The 1.7 mΩ R<sub>DS(on)</sub> reduces full-load conduction loss and improves efficiency at the 30-50 A typical IBC output current level, while the 175 °C junction rating provides headroom during thermal stress events. The HSOF-8 footprint is compatible with high-density surface-mount manufacturing. For best results in this topology, derate to ~30-40 A continuous PCB current and use a 4-layer PCB with at least 2 oz copper on top/bottom layers to spread heat from the exposed source pad.
Recommended
High-Current Motor Drive / H-Bridge Switch
The IAUTN12S5N017ATMA1 can be used as the high-side or low-side switch in a 48 V brushless DC (BLDC) or permanent-magnet motor drive H-bridge. Its 314 A continuous current rating supports peak motor-startup torque, and the 120 V V<sub>DS</sub> rating covers the back-EMF generated during fast motor deceleration at 48 V bus. The HSOF-8 package allows four MOSFETs to be placed side-by-side on the PCB in a compact full-bridge layout. A 10-15 kHz PWM switching frequency is typical for motor drives, well within the device's switching capability. Use a dedicated gate driver with integrated dead-time generation (e.g. IR2109SPBF family) and ensure the Kelvin source pin is bonded directly to the gate-driver ground reference.
Recommended
48V Hot-Swap / OR-ing Switch
In 48 V server backplanes and telecom shelves, the IAUTN12S5N017ATMA1 functions as a hot-swap or OR-ing switch controlling the inrush current when a card is inserted into a live 48 V bus. Its 1.7 mΩ R<sub>DS(on)</sub> produces minimal steady-state voltage drop at 30-50 A load currents, and the 120 V V<sub>DS</sub> rating handles the worst-case bus voltage during transient load-dump events. The 175 °C junction temperature provides headroom for the brief inrush thermal spike. Drive the gate with a controlled dV/dt circuit (gate resistor plus timing capacitor) to limit inrush current to a safe value; pair with a hot-swap controller such as the TLD5097EPXUMA1 for full protection.
Recommended
Battery Disconnect / Load Switch in 48V Systems
The IAUTN12S5N017ATMA1 is suitable as a battery-side disconnect switch or load switch in 48 V battery packs and energy-storage modules. Its low R<sub>DS(on)</sub> reduces continuous power dissipation in the main current path - critical for battery runtime - and its 120 V rating handles the worst-case transients seen during battery pack switching and inverter kickback. The automotive-grade qualification (per Infineon part page) makes it attractive for mild-hybrid and EV 48 V subsystems. A simple gate-drive scheme with a 10 V enhancement supply and a slow-discharge pull-down provides safe fail-off behaviour; add a TVS across drain-source for inductive load protection.
Recommended
Industrial High-Current Synchronous Rectifier
In high-current (>100 A) industrial synchronous rectifier stages for 48 V-input telecom or solar MPPT converters, the IAUTN12S5N017ATMA1 can be used as the low-side synchronous rectifier when the operating voltage stays below 100 V. Its 1.7 mΩ R<sub>DS(on)</sub> matches or beats Schottky diode forward drops at high current, eliminating rectifier conduction loss entirely in hard-switched topologies. The HSOF-8 footprint enables dense paralleling for higher current applications. Drive with a synchronous-rectifier controller that senses drain voltage to optimise dead-time; the Kelvin source pin enables fast, accurate drain-voltage sensing for optimum efficiency.
Recommended
Recommended Products Summary
Engineering reference data for IAUTN12S5N017ATMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IAUCN10S5L280DATMA1 | IAUC120N06S5L015ATMA1 | IAUC120N04S6N009ATMA1 | VBGQT11202 |
|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | VBsemi |
| Package | PG-HSOF-8-1 | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same | PG-HSOF-8-1 - same |
| Drain-Source Voltage (V_DS) | 120 V | 120 V | 120 V | 120 V | 120 V |
| On-Resistance R_DS(on) @ 10V | 1.7 mΩ | 2.8 mΩ (+65%) | 1.5 mΩ (-12%) | 0.9 mΩ (-47%) | similar to 1.7 mΩ class |
| Continuous Drain Current (T_C=25°C) | 314 A | per datasheet | per datasheet | per datasheet | per VBsemi datasheet |
| Technology Family | OptiMOS 5 (trench) | OptiMOS 5 | OptiMOS 5 | OptiMOS 5 | Trench (VBsemi) |
Key Differentiators
- Lowest R<sub>DS(on)</sub> in the OptiMOS 5 120V HSOF-8 family (vs IAUCN10S5L280DATMA1)
- Optimised gate-charge vs conduction-loss trade-off (vs IAUC120N06S5L015ATMA1)
- Automotive-qualified OptiMOS 5 platform (vs VBGQT11202 (VBsemi cross-brand))
- Industry-standard HSOF-8 footprint shared across multiple Infineon parts (vs Custom-package competitors)
Design Notes
Estimated: at 50 A continuous PCB current, R<sub>DS(on)</sub>=1.7 mΩ, and T<sub>A</sub>=85 °C, the part dissipates approximately 4.25 W of conduction loss in a 48 V application. On a 2 oz copper 4-layer PCB with 1 sq.in. heatsink area on the exposed source pad, the package's R<sub>θJA</sub> is approximately 35-40 °C/W, giving a junction temperature rise of ~150-170 °C above ambient. This leaves very little thermal margin at full load - use an even larger copper area (≥2 sq.in.) or forced-air cooling for continuous operation. Verified thermal resistance figures must be cross-checked against the Infineon application note for the PG-HSOF-8-1 package.
Use the Kelvin-source pin (pin 2) as the gate-driver return to suppress source-inductance-induced gate ringing. Place the gate-drive resistor within 5 mm of pin 1 (Gate), and keep the gate-driver loop area (gate-drive resistor → gate → kelvin-source → back to driver ground) under 0.5 cm². Route the high-current source and drain copper directly from the exposed pads on top/bottom layers with multiple parallel vias. Place input capacitors as close as possible to the drain pad; in synchronous-rectifier topologies, minimise the high-side-to-low-side source-pad copper overlap to reduce capacitive coupling.
Recommended PCB land pattern: source pads 3-8 should be merged into a single large copper pour that doubles as the thermal pad; the drain pad is on the opposite (bottom) side connected via thermal vias. Use at least 9-12 thermal vias (0.3 mm drill, 0.6 mm pad, 1 mm pitch) under the source pad to conduct heat to internal copper planes. Solder paste stencil should be 0.15-0.20 mm thick for the main pads; a slightly thinner stencil (0.12 mm) helps reduce solder voiding on the large thermal pad (typical voiding target: <25% of pad area per IPC-7530).
Critical pitfalls to avoid: (1) driving the gate below 8 V at full load - R<sub>DS(on)</sub> rises sharply below V<sub>GS</sub>=6.5 V and the part will thermally runaway; (2) neglecting avalanche energy in inductive switching - this part is avalanche-rated but operating beyond E<sub>AS</sub> will degrade R<sub>DS(on)</sub> over time; (3) placing the gate-driver return at the wrong source pad - this defeats the Kelvin connection and causes gate-oscillation at high dV/dt; (4) using a single 1 oz copper layer for the source pad - the part's thermal performance is dominated by the PCB copper area, not the silicon itself.
To control EMI in 48 V DC-DC converters using this part: (1) use a 4-10 Ω gate resistor with optional ferrite bead to slow the gate-edge dV/dt; (2) place a small RC snubber (1-10 Ω + 1-10 nF) across drain-source if ringing exceeds 20% of V<sub>DS</sub>; (3) keep the switching-node copper area minimal to reduce parasitic capacitance; (4) use a gate-driver with split turn-on/turn-off gate resistors to independently control dV/dt and dI/dt; (5) consider spread-spectrum frequency modulation in the controller to flatten the EMI spectrum by 10-15 dB.
Compliance Information
RoHS compliant per distributor listings (DigiKey, Mouser). AEC-Q101 (automotive MOSFET standard, equivalent for discrete semiconductors) expected for the OptiMOS 5 120 V family per Infineon automotive product page. AEC-Q100 specifically applies to ICs, not discrete MOSFETs - so AEC-Q100 is marked not_applicable here; the relevant automotive standard for this discrete MOSFET is AEC-Q101.
