IDD04SG60CXTMA2 vs IDH04G65C6XKSA1 Comparison

Detailed side-by-side comparison of IDD04SG60CXTMA2 by Infineon and IDH04G65C6XKSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
IDD04SG60CXTMA2 IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon

IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon

IDD04SG60CXTMA2 βœ“ Active
Infineon
IDH04G65C6XKSA1 IDH04G65C6XKSA1 - 650V SiC Schottky Diode 4A | Infineon

IDH04G65C6XKSA1 - 650V SiC Schottky Diode 4A | Infineon

IDH04G65C6XKSA1 βœ“ Active

Specification Comparison

Parameter IDD04SG60CXTMA2 IDH04G65C6XKSA1
Brand Infineon Infineon
Category Diodes Diodes
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.74 $0.92
Manufacturer Infineon Technologies β€”
Product Family CoolSiC G3 thinQ Schottky Diode β€”
Device Type Silicon Carbide (SiC) Schottky Diode, Single β€”
Repetitive Peak Reverse Voltage (VRRM) 600 V 650 V
Continuous Forward Current (IF), TC=135 C 4 A β€”
Non-Repetitive Forward Surge Current (IFSM), tp=10ms [DATA_NEEDED: IFSM surge rating] β€”
Forward Voltage (VF) typ. at IF=4A, Tj=25 C 1.5 V β€”
Total Capacitive Charge (Qc) 4.5 nC [DATA_NEEDED: Qc value]
Total Capacitance (Ctot) at VR=400V [DATA_NEEDED: Ctot at 400 V] β€”
Reverse Current (IR) at VR=600V, Tj=25 C [DATA_NEEDED: IR max at 600 V] β€”
Operating Junction Temperature Range -55 C to +175 C -55C to +175C
Storage Temperature Range -55 C to +150 C [DATA_NEEDED: Tstg min/max]
Package PG-TO252-3 (DPAK), 3-pin surface mount with tab β€”
Mounting Type Surface Mount Through Hole
RoHS Status Compliant Compliant
Lead-Free Finish Yes (Sn plating) β€”
MSL (Moisture Sensitivity Level) MSL 3 (per JEDEC J-STD-020) β€”
Halogen-Free Yes β€”
Diode Type β€” Silicon Carbide (SiC) Schottky
Series β€” CoolSiC G6
Average Forward Current (IF(AV)) β€” 4 A
Non-Repetitive Peak Surge Current (IFSM) β€” 12 A (per distributor listing)
Forward Voltage (VF) at IF β€” 1.25 V (typical at rated IF)
Reverse Recovery Charge (Qrr) β€” 0 nC (SiC Schottky - no reverse recovery)
Junction Capacitance (Cj) β€” 205 pF @ 1 V, 1 MHz (per onepcba listing)
Package / Supplier Device Package β€” PG-TO220-2 (through-hole)
Configuration β€” Single Diode

Datasheets & Resources

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