IDD04SG60CXTMA2 - 600V 4A SiC Schottky Diode DPAK | Infineon
MPN: IDD04SG60CXTMA2 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $1.85 | $1.85 |
| 10 | $1.62 | $16.20 |
| 100 | $1.28 | $128.00 |
| 500 | $1.05 | $525.00 |
| 1,000 | $0.88 | $880.00 |
| 2,500 | $0.74 | $1,850.00 |
Drop-in alternatives for IDD04SG60CXTMA2 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
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IDD04SG60CXTMA2 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolSiC G3 thinQ Schottky Diode |
| Device Type | Silicon Carbide (SiC) Schottky Diode, Single |
| Repetitive Peak Reverse Voltage (VRRM) | 600 V |
| Continuous Forward Current (IF), TC=135 C | 4 A |
| Forward Voltage (VF) typ. at IF=4A, Tj=25 C | 1.5 V |
| Total Capacitive Charge (Qc) | 4.5 nC |
| Operating Junction Temperature Range | -55 C to +175 C |
| Storage Temperature Range | -55 C to +150 C |
| Package | PG-TO252-3 (DPAK), 3-pin surface mount with tab |
| Mounting Type | Surface Mount |
| RoHS Status | Compliant |
| Lead-Free Finish | Yes (Sn plating) |
| MSL (Moisture Sensitivity Level) | MSL 3 (per JEDEC J-STD-020) |
| Halogen-Free | Yes |
IDD04SG60CXTMA2 Pin Configuration
| Pin 1 | Cathode (K) — Diode cathode; typically connected to switching node / DC bus positive |
| Pin 2 | Anode (A) — Diode anode; typically connected to PFC choke or transformer winding |
| Pin 3 | NC — Not connected (mechanical pin only) |
| Pin Tab | Cathode (K) — Cathode tab - serves as main thermal pad and second cathode connection; solder to copper pour |
Safe Operating Area (SOA) & Thermal Characteristics
No official SOA curve available for this component. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.
Typical Applications
IDD04SG60CXTMA2 is suitable for 6 applications: Single-Phase CCM Boost PFC, Totem-Pole Bridgeless PFC, Solar Inverter Output Rectifier, EV On-Board Charger PFC Stage, Industrial SMPS Freewheeling Diode, Server & Telecom Rectifier Module.
Single-Phase CCM Boost PFC
The IDD04SG60CXTMA2 is a textbook boost-diode choice for single-phase continuous-conduction-mode power-factor-correction stages operating from universal-input mains (85-305 VAC). Its zero reverse-recovery charge eliminates the turn-on loss spike on the companion boost MOSFET and removes the reverse-recovery-induced EMI that otherwise forces designers to slow switching edges. At a rectified 400 V DC bus and a typical 4 A boost current, the part's 1.5 V forward drop dissipates ~6 W, while its 4.5 nC Qc keeps switching loss small even at 100 kHz. Compared with a 600 V silicon ultrafast rectifier in the same PFC stage, this Infineon CoolSiC G3 part typically yields 0.5-1.0% efficiency improvement and reduces PFC choke temperature by 5-10 C - critical for meeting 80 Plus Titanium and 80 Plus Titanium-equivalent efficiency targets in 1-3 kW server, telecom, and industrial SMPS designs.
Recommended
Totem-Pole Bridgeless PFC
The IDD04SG60CXTMA2 is well-suited as the slow leg diode in a totem-pole bridgeless PFC front end, where the diode carries continuous line-frequency current while the SiC MOSFETs switch at high frequency. Its zero Qrr is essential in this topology because any reverse recovery current circulates through the high-frequency leg, causing severe loss and EMI - silicon ultrafast diodes simply cannot operate reliably here. The part's 600 V blocking margin comfortably handles a 480 V three-phase rectified bus (~680 V peak), and its 4 A continuous rating matches typical 1.5-3 kW single-phase totem-pole designs. According to Infineon's totem-pole reference designs, pairing this diode (or, in higher-power stages, two in parallel) with EiceDRIVER gate drivers and CoolSiC MOSFETs yields full-load efficiencies above 99% - a level unattainable with conventional boost PFC using silicon diodes.
Recommended
Solar Inverter Output Rectifier
In single-phase string solar inverters and DC/DC boost stages between PV panels and the grid-tie inverter, the IDD04SG60CXTMA2 serves as a freewheeling or boost rectifier carrying switching currents up to 4 A at high frequency. The 600 V blocking comfortably handles the open-circuit PV string voltages of typical residential installations (up to 600 V VOC for 1500 V-rated strings), and the SiC Schottky's positive temperature coefficient on VF makes parallel operation safe for higher-power three-phase string inverters without ballast resistors. Compared with silicon ultrafast rectifiers, the Infineon CoolSiC part enables 50-100 kHz switching frequencies in the boost stage, shrinking magnetics and improving MPPT tracking accuracy. Its 175 C maximum junction temperature also reduces heatsink requirements in outdoor solar inverters operating in elevated ambient temperatures.
Recommended
EV On-Board Charger PFC Stage
Inside a 3.3 kW to 11 kW EV on-board charger, the IDD04SG60CXTMA2 handles the boost-diode duty in the CCM PFC front end fed from single-phase 230 VAC or split-phase 240 VAC mains. Its 600 V VRRM easily survives the rectified ~400 V DC link, and its 4 A continuous rating is appropriate for OBC modules in the 3.3 kW class (where PFC current is ~7-8 A and two devices are typically paralleled). According to Infineon automotive-grade design references, the SiC Schottky's zero recovery current reduces PFC-stage switching loss by 30-50% versus silicon ultrafast rectifiers, directly improving charger efficiency and reducing thermal load on the liquid-cooled cold plate - both critical to meeting the charge-cycle time and range-loss budgets of modern electric vehicles. AEC-Q101 qualification should be verified for production deployment.
Recommended
Industrial SMPS Freewheeling Diode
In hard-switched industrial SMPS half-bridge and full-bridge topologies rated 1-3 kW, the IDD04SG60CXTMA2 functions as the freewheeling (or anti-parallel) diode across the transformer's primary-side switching leg. Its zero Qrr removes the diode-induced turn-on loss spike on the companion MOSFETs, enabling switching frequencies up to 100-150 kHz with manageable thermals and reducing the need for snubber circuits. The 600 V blocking fits 380-480 VAC three-phase rectified buses with margin, and the DPAK package's tab allows direct soldering to PCB copper for thermal relief. Compared with 600 V silicon ultrafast rectifiers, this Infineon CoolSiC G3 part typically reduces primary-side switching loss by 20-40% and improves full-load efficiency by 0.5-1.0% - a tangible gain in industrial SMPS products targeting 80 Plus Titanium or IEC 61800-9 efficiency classes.
Recommended
Server & Telecom Rectifier Module
Inside a 1-3 kW server or telecom rectifier module converting 200-480 VAC three-phase to a 48 VDC or 12 VDC distribution bus, the IDD04SG60CXTMA2 serves as the boost diode in the CCM PFC stage that precedes the isolated DC-DC converter. Server-grade rectifiers demand 96-97% peak efficiency and tight iTHD, both of which benefit from the SiC Schottky's zero reverse-recovery and low Qc. According to 80 Plus Titanium requirements, every 0.5% efficiency gain translates to measurable operational-cost savings at hyperscale data-center scale. The DPAK package's tab facilitates thermal dissipation into the chassis-mounted cold plate or fan-cooled heatsink, and the part's 175 C junction-temperature rating provides thermal margin in densely packed 1U and 2U form factors where ambient inlet temperatures can exceed 50 C.
Recommended
Recommended Products Summary
Engineering reference data for IDD04SG60CXTMA2 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IDD06SG60CXTMA2 | IDD04SG60C | IDH04G65C6XKSA1 | C3D04060A | SCS104AMC |
|---|---|---|---|---|---|---|
| Brand | Infineon | Infineon | Infineon | Infineon | Wolfspeed | ROHM Semiconductor |
| Package | PG-TO252-3 (DPAK) | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same | PG-TO252-3 (DPAK) - same |
| Reverse Voltage (VRRM) | 600 V | 600 V | 600 V | 650 V | 600 V | 600 V |
| Continuous Forward Current (IF) | 4 A (TC=135 C) | 6 A | 4 A | 4 A | 4 A | 4 A |
| Capacitive Charge (Qc) | 4.5 nC | [DATA_NEEDED] | 4.5 nC | [DATA_NEEDED] | [DATA_NEEDED] | [DATA_NEEDED] |
| Reverse Recovery (Qrr) | 0 nC (SiC Schottky) | 0 nC | 0 nC | 0 nC | 0 nC | 0 nC |
| Typical VF at IF=4 A | ~1.5 V | ~1.5 V | ~1.5 V | ~1.5 V | ~1.7 V | ~1.5 V |
| Max Junction Temperature | 175 C | 175 C | 175 C | 175 C | 175 C | 175 C |
| Technology | SiC Schottky (thinQ G3) | SiC Schottky (thinQ G3) | SiC Schottky (thinQ G3) | SiC Schottky (thinQ G6) | SiC Schottky (Wolfspeed Z-Rec) | SiC Schottky (ROHM 2nd-gen) |
Key Differentiators
- CoolSiC G3 thinQ generation with verified low Qc (vs C3D04060A (Wolfspeed C3D series, older generation))
- Zero reverse-recovery charge for hard-switched PFC (vs 600 V ultrafast silicon rectifier (e.g., STTH4R06S))
- Drop-in footprint to standard DPAK (TO-252) ultrafast-rectifier land pattern (vs Discrete SiC MOSFETs in TO-247 or D2PAK requiring layout rework)
Design Notes
Estimated: at a continuous forward current of 4 A and typical forward voltage of 1.5 V, conduction dissipation is approximately P = VF x IF = 1.5 V x 4 A = 6 W. The DPAK (PG-TO252-3) package has a junction-to-ambient thermal resistance of approximately 62 C/W on a 1 square-inch copper pad; at 25 C ambient this yields a junction rise of roughly 6 W x 62 C/W = 372 C above ambient (far exceeding 175 C max), so for continuous 4 A operation a substantially larger copper pour, forced airflow, or a topside heatsink is required. Designers should verify junction temperature using the manufacturer's thermal derating curve and aim for TJ(max) below 150 C for long-term reliability margin.
Place the IDD04SG60CXTMA2 as close as physically possible to the switching-node pad of the companion boost MOSFET to minimize the high-frequency loop area carrying the diode's capacitive current. A small loop reduces both parasitic inductance (which can cause voltage overshoot at diode turn-off) and radiated EMI. Use wide copper pours on both anode and cathode, and stitch multiple thermal vias under the DPAK tab to the opposite PCB layer for improved thermal spreading. The DPAK tab is internally connected to the cathode, so the high-frequency switching node should not be referenced to a quiet ground plane beneath the tab - place a clearance keep-out if needed.
Although the IDD04SG60CXTMA2 has zero reverse-recovery charge, it does have a capacitive charge Qc of 4.5 nC that is delivered into the companion MOSFET at every switching cycle and contributes to turn-on loss. Designers accustomed to silicon ultrafast rectifiers often overlook this loss source. Also note that the SiC Schottky's higher typical forward voltage (~1.5 V vs ~1.0 V for silicon ultrafast) makes conduction loss worse at low currents, so the part's efficiency advantage only emerges above ~40-50 kHz switching frequency or in totem-pole topologies where Qrr must be zero. Finally, never operate the diode above its 600 V repetitive peak reverse voltage - leave at least 50 V margin for transient ringing on the DC bus.
The SiC Schottky's positive temperature coefficient on VF supports parallel operation of two or more IDD04SG60CXTMA2 devices for higher-current applications (e.g., 8 A PFC stages) - when one device runs hotter its VF rises, naturally shunting current to the cooler device. According to Infineon's paralleling guidelines, simple parallel operation works reliably because of this self-balancing behavior, provided the devices share a symmetric thermal layout. Avoid mixing different part numbers or lots with substantially different VF in the same parallel group, and place gate/control connections to ensure symmetric current sharing during transients.
Compliance Information
RoHS and lead-free compliance per Infineon product page and DigiKey/Mouser distributor listings as of 2026-09-14. Industrial grade - AEC-Q101 automotive qualification should be verified separately for automotive deployments (this part number is the industrial variant; the -A suffix designates automotive grade when applicable).
