IGI65D1414A3MSXUMA1 vs IPB110P06LMATMA1 Comparison
Detailed side-by-side comparison of IGI65D1414A3MSXUMA1 by Infineon and IPB110P06LMATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΞ© QFN-32 | Infineon
IGI65D1414A3MSXUMA1 β Active
Specification Comparison
| Parameter | IGI65D1414A3MSXUMA1 | IPB110P06LMATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $4.95 | $1.31 |
| Manufacturer | Infineon Technologies | β |
| Product Family | CoolGaNβ’ HEMT | β |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) | β |
| Drain-Source Voltage (V_DS, max) | 650 V | β |
| On-Resistance (R_DS(on), typ) | 140 mΞ© per FET | β |
| Continuous Drain Current | 13.7 A (per Newark listing) | β |
| Gate Threshold Voltage (V_GS(th)) | [DATA_NEEDED: V_GS(th) value] | β |
| Technology | Enhancement-mode GaN HEMT (eMode) | OptiMOS (trench MOSFET) |
| Package | PG-TIQFN-32-1 (QFN-32, 6x8 mm) | β |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature Range | [DATA_NEEDED: operating temperature range] | -55 C to +175 C (TJ) |
| Total Gate Charge (Q_G, typ) | [DATA_NEEDED: Q_G total] | β |
| Output Charge (Q_OSS) | [DATA_NEEDED: Q_OSS value] | β |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) | β |
| Thermal Resistance (R_thJA) | [DATA_NEEDED: R_thJA value] | β |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting | β |
| MSL Level | [DATA_NEEDED: MSL level] | β |
| RoHS Compliance | Compliant | β |
| FET Type | β | P-Channel |
| Drain-Source Voltage (VDS) | β | -60 V |
| Continuous Drain Current (ID) at TC=25C | β | -100 A |
| Maximum Power Dissipation (PD) at TC=25C | β | 300 W |
| On-State Resistance (RDS(on) max) at VGS=10V | β | 11 mOhm @ ID=100A |
| Gate Threshold Voltage (VGS(th) max) | β | 2 V @ ID=5.55 mA |
| Gate-Source Voltage (VGS max) | β | +/-20 V |
| Package / Case | β | PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab) |
| Supplier Device Package | β | PG-TO263-3-2 |
| Gate Drive Level | β | Logic-level compatible |
| RoHS Status | β | Compliant |
| Lead-Free | β | Yes |