IGI65D1414A3MSXUMA1 vs IPB110P06LMATMA1 对比

详细并排对比 IGI65D1414A3MSXUMA1 出自 Infineon 和 IPB110P06LMATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPB110P06LMATMA1 IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 - P-Ch 60V 100A OptiMOS MOSFET | Infineon

IPB110P06LMATMA1 ✓ 量产中

规格对比

参数 IGI65D1414A3MSXUMA1 IPB110P06LMATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $4.95 $1.31
Manufacturer Infineon Technologies —
Product Family CoolGaN™ HEMT —
Configuration Half-Bridge (2 FETs in QFN-32, high-side + low-side) —
Drain-Source Voltage (V_DS, max) 650 V —
On-Resistance (R_DS(on), typ) 140 mΩ per FET —
Continuous Drain Current 13.7 A (per Newark listing) —
Gate Threshold Voltage (V_GS(th)) [DATA_NEEDED: V_GS(th) value] —
Technology Enhancement-mode GaN HEMT (eMode) OptiMOS (trench MOSFET)
封装 PG-TIQFN-32-1 (QFN-32, 6x8 mm) —
安装类型 Surface Mount Surface Mount
工作温度范围 [DATA_NEEDED: operating temperature range] -55 C to +175 C (TJ)
Total Gate Charge (Q_G, typ) [DATA_NEEDED: Q_G total] —
Output Charge (Q_OSS) [DATA_NEEDED: Q_OSS value] —
Reverse Recovery Charge (Q_RR) 0 nC (intrinsic to GaN HEMT, no body diode recovery) —
Thermal Resistance (R_thJA) [DATA_NEEDED: R_thJA value] —
Typical Applications AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting —
MSL 等级 [DATA_NEEDED: MSL level] —
RoHS Compliance Compliant —
FET Type — P-Channel
Drain-Source Voltage (VDS) — -60 V
Continuous Drain Current (ID) at TC=25C — -100 A
Maximum Power Dissipation (PD) at TC=25C — 300 W
On-State Resistance (RDS(on) max) at VGS=10V — 11 mOhm @ ID=100A
Gate Threshold Voltage (VGS(th) max) — 2 V @ ID=5.55 mA
Gate-Source Voltage (VGS max) — +/-20 V
封装 / 外壳 — PG-TO263-3-2 (D2PAK, TO-263AB, 2 leads + tab)
Supplier Device Package — PG-TO263-3-2
Gate Drive Level — Logic-level compatible
RoHS 状态 — Compliant
Lead-Free — Yes

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