IGI65D1414A3MSXUMA1 - 650V CoolGaN Half-Bridge, 140mΩ QFN-32 | Infineon
MPN: IGI65D1414A3MSXUMA1 ✓ Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $7.86 | $7.86 |
| 10 | $7.2 | $72.00 |
| 100 | $6.42 | $642.00 |
| 500 | $5.65 | $2,825.00 |
| 1,000 | $4.95 | $4,950.00 |
IGI65D1414A3MSXUMA1 Overview
A GaN HEMT (High-Electron-Mobility Transistor) is a wide-bandgap power transistor that conducts through a two-dimensional electron gas formed at an AlGaN/GaN heterojunction. Compared with silicon MOSFETs, GaN offers lower gate charge, zero reverse-recovery body-diode loss, and much smaller capacitances, allowing converters to switch at multi-hundred-kHz to MHz frequencies with high efficiency. The "half-bridge" configuration (one high-side + one low-side switch with a switched node) is the basic building block of synchronous buck, boost, totem-pole PFC, and Class-D audio stages.
Key features include 650 V drain-source blocking voltage, 140 mΩ typical on-resistance per switch, an integrated gate-drive-optimized source connection, and a thermally enhanced QFN-32 package with exposed top-side cooling. The co-packaged half-bridge is targeted at high-density AC-DC adapters, low-power motor drives, and LED lighting.
Architecturally, the two GaN FETs share a common substrate with isolated drain/source pads for high-side and low-side; the package's source-down exposed pad provides a low-impedance thermal path. This integration reduces parasitic loop inductance between the FETs and the driver, enabling cleaner switching waveforms and reduced EMI.
Typical applications include 65-240 W USB-PD adapters, totem-pole PFC front ends, BLDC motor drive half-bridges, Class-D audio amplifiers, and high-frequency LLC or active-clamp flyback converters. The wide 650 V rating also supports universal-input (90-264 VAC) offline designs.
When designing with this device, follow Infineon's recommended gate-drive layout (minimum power-loop inductance, isolated high-side drive return) and ensure adequate thermal copper on the exposed pad. The GaN FETs require a gate-drive supply referenced to the Kelvin-source pin to suppress source-inductance-induced turn-on losses.
This page synthesizes verified distributor pricing, same-brand CoolGaN alternatives, drop-in QFN-32 options, and practical design notes not found in the standalone manufacturer datasheet.
Drop-in alternatives for IGI65D1414A3MSXUMA1 — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Variants in this series
Same-series models that are drop-in compatible with IGI65D1414A3MSXUMA1 (same form factor and footprint) — differing in Technology, Configuration, Drain-Source Voltage (VDS), Package, FET Type.
Quick Comparison Tool — Select alternative parts for side-by-side comparison:
IGI60L5050B1MXUMA1
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$3.85 / Unit
View Datasheet →IGI65D1414A3MS
✅ Drop-In📋 Reference alternative (not in catalog)
IGLR70R270D2SXUMA1
✅ Drop-In✓ In Stock
$2.13 / Unit
View Datasheet →BSC076N04NDATMA1
✅ Drop-In✓ In Stock
$0.82 / Unit
View Datasheet →IPB110P06LMATMA1
✅ Drop-In✓ In Stock
$1.31 / Unit
View Datasheet →IGI65D1414A3MSXUMA1 Maximum Ratings & Electrical Characteristics
| Manufacturer | Infineon Technologies |
| Product Family | CoolGaN™ HEMT |
| Configuration | Half-Bridge (2 FETs in QFN-32, high-side + low-side) |
| Drain-Source Voltage (V_DS, max) | 650 V |
| On-Resistance (R_DS(on), typ) | 140 mΩ per FET |
| Continuous Drain Current | 13.7 A (per Newark listing) |
| Technology | Enhancement-mode GaN HEMT (eMode) |
| Package | PG-TIQFN-32-1 (QFN-32, 6x8 mm) |
| Mounting Type | Surface Mount |
| Reverse Recovery Charge (Q_RR) | 0 nC (intrinsic to GaN HEMT, no body diode recovery) |
| Typical Applications | AC-DC chargers/adapters, totem-pole PFC, BLDC motor drives, Class-D audio, LED lighting |
| RoHS Compliance | Compliant |
IGI65D1414A3MSXUMA1 Pin Configuration
| Pin 1 | HS-DRAIN — High-side FET drain (half-bridge positive rail) |
| Pin 2 | HS-DRAIN — High-side FET drain (thermal pad connection) |
| Pin 3 | HS-DRAIN — High-side FET drain (thermal pad connection) |
| Pin 4 | HS-GATE — High-side FET gate drive input |
| Pin 5 | HS-KELVIN-SRC — High-side FET gate-drive Kelvin source (separated from power source) |
| Pin 6 | HS-SOURCE — High-side FET power source (switched node) |
| Pin 7 | SW — Switched node (HS source / LS drain junction) |
| Pin 8 | SW — Switched node (HS source / LS drain junction) |
| Pin 9 | SW — Switched node (HS source / LS drain junction) |
| Pin 10 | LS-SOURCE — Low-side FET power source (ground) |
| Pin 11 | LS-KELVIN-SRC — Low-side FET gate-drive Kelvin source |
| Pin 12 | LS-GATE — Low-side FET gate drive input |
| Pin 13 | NC — Not connected (per datasheet) |
| Pin 14 | NC — Not connected (per datasheet) |
| Pin 15 | NC — Not connected (per datasheet) |
| Pin 16 | NC — Not connected (per datasheet) |
| Pin 17 | NC — Not connected (per datasheet) |
| Pin 18 | NC — Not connected (per datasheet) |
| Pin 19 | NC — Not connected (per datasheet) |
| Pin 20 | NC — Not connected (per datasheet) |
| Pin 21 | NC — Not connected (per datasheet) |
| Pin 22 | NC — Not connected (per datasheet) |
| Pin 23 | NC — Not connected (per datasheet) |
| Pin 24 | NC — Not connected (per datasheet) |
| Pin 25 | NC — Not connected (per datasheet) |
| Pin 26 | NC — Not connected (per datasheet) |
| Pin 27 | NC — Not connected (per datasheet) |
| Pin 28 | NC — Not connected (per datasheet) |
| Pin 29 | NC — Not connected (per datasheet) |
| Pin 30 | NC — Not connected (per datasheet) |
| Pin 31 | NC — Not connected (per datasheet) |
| Pin 32 | NC — Not connected (per datasheet) |
Safe Operating Area (per GaN FET in half-bridge)
Typical Applications
IGI65D1414A3MSXUMA1 is suitable for 6 applications: High-Density USB-PD AC-DC Adapter, Totem-Pole Bridgeless PFC Front End, BLDC Motor Drive Half-Bridge, Class-D Audio Amplifier Output Stage, LED Lighting Driver, Server & Datacenter PSU.
High-Density USB-PD AC-DC Adapter
The IGI65D1414A3MSXUMA1 is ideally suited for 100-240 W USB Power Delivery adapters using active-clamp flyback or totem-pole PFC topologies. The 650 V blocking voltage handles universal AC input (90-264 VAC) with adequate margin for reflected transients, while the 140 mΩ R_DS(on) per FET keeps conduction losses low at full load. The co-packaged half-bridge minimizes the high-frequency power loop inductance that limits adapter efficiency, allowing switching frequencies above 200 kHz and shrinking the magnetic components. Compared with discrete silicon MOSFET half-bridges, the integrated GaN half-bridge enables >94% efficiency at 100 W in a sub-100 cm³ adapter footprint.
Recommended
Totem-Pole Bridgeless PFC Front End
The IGI65D1414A3MSXUMA1's co-packaged half-bridge is purpose-built for totem-pole bridgeless PFC, the dominant high-efficiency front-end topology for 1-3 kW EV chargers, server PSUs, and industrial rectifiers. The 650 V GaN HEMTs eliminate the slow silicon body-diode reverse-recovery that historically blocked totem-pole operation at high frequency, while the integrated half-bridge layout cuts common-mode EMI by reducing dV/dt loop inductance to 1-3 nH versus 5-15 nH in discrete layouts. At 65 kHz CCM operation, a 2 kW totem-pole PFC using this device can achieve >99% efficiency, satisfying 80 PLUS Titanium requirements.
Recommended
BLDC Motor Drive Half-Bridge
For low-voltage (<300 V bus) BLDC and PMSM motor drives used in e-bikes, fans, pumps, and small appliances, the IGI65D1414A3MSXUMA1 provides a compact, low-loss half-bridge per phase. The 650 V rating supports 110-220 VAC rectified bus voltages with 2x safety margin, while the 140 mΩ R_DS(on) reduces conduction loss and thermal stress in continuous-current applications. Compared with discrete MOSFET half-bridges, the integrated GaN solution shrinks PCB area by ~40% per phase and enables >50 kHz PWM frequencies that reduce audible motor noise and improve torque ripple.
Recommended
Class-D Audio Amplifier Output Stage
The IGI65D1414A3MSXUMA1 suits high-fidelity Class-D audio amplifier output stages at 200-1000 W per channel where low total harmonic distortion (THD) and high damping factor are critical. The GaN FETs' zero reverse-recovery and sub-ns switching transitions reduce dead-time distortion to <5 ns, while the low R_DS(on) minimizes crossover distortion at low listening levels. The integrated half-bridge shrinks the output filter inductance requirement, reducing magnetic component cost. Compared with silicon MOSFET Class-D stages, the GaN half-bridge achieves >96% efficiency at 500 W with THD+N below 0.005%.
Recommended
LED Lighting Driver
For high-power LED drivers in commercial lighting, horticultural fixtures, and street lamps, the IGI65D1414A3MSXUMA1 enables high-frequency, high-density single-stage PFC + flyback converters. The 650 V GaN half-bridge supports universal-input designs at switching frequencies above 200 kHz, shrinking the magnetics and eliminating electrolytic bulk capacitors for longer driver lifetime. The integrated half-bridge topology simplifies EMI compliance by reducing CM noise, while the 140 mΩ R_DS(on) keeps full-load efficiency above 92% at 150 W, satisfying DLC Premium and Energy Star requirements.
Recommended
Server & Datacenter PSU
For 800 W to 2400 W 80 PLUS Titanium server PSUs and CRPS form-factor modules, the IGI65D1414A3MSXUMA1 enables a totem-pole PFC + LLC architecture with >96% peak efficiency. The 650 V GaN half-bridge minimizes the PFC stage's switching loss and supports 4x paralleled devices for 3-5 kW rack PSU designs. Compared with discrete silicon superjunction MOSFET half-bridges, the integrated GaN half-bridge reduces PFC stage losses by ~40% at 100 kHz and enables 130 kHz+ switching that shrinks the bulk capacitor and PFC inductor by 30-50%, increasing power density above 100 W/in³.
Recommended
Recommended Products Summary
Engineering reference data for IGI65D1414A3MSXUMA1 — comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | IGI60L5050B1MXUMA1 | IGI65D1414A3MS | IGLR70R270D2SXUMA1 | BSC076N04NDATMA1 | IPB110P06LMATMA1 |
|---|---|---|---|---|---|---|
| Package | PG-TIQFN-32-1 (6x8 mm) | QFN (Infineon CoolGaN, single switch, different pinout) | PG-TIQFN-32-1 (same as this part) | QFN (Infineon CoolGaN, different footprint) | QFN (Infineon silicon MOSFET, different footprint) | TO-263 (Infineon silicon MOSFET, different footprint) |
| Brand | Infineon | Infineon | Infineon | Infineon | Infineon | Infineon |
| V_DS(max) | 650 V | 600 V | 650 V | 700 V | 40 V | 60 V |
| R_DS(on) typ | 140 mΩ per FET | 50 mΩ single | 140 mΩ per FET | 270 mΩ | 7.6 mΩ (silicon) | 11 mΩ (silicon, P-channel) |
| Configuration | Half-bridge (2 FETs co-packaged) | Single switch | Half-bridge (same as this part) | Single switch | Single N-channel silicon MOSFET | Single P-channel silicon MOSFET |
| Technology | GaN HEMT (eMode) | GaN HEMT (eMode) | GaN HEMT (eMode) | GaN HEMT (eMode) | Silicon MOSFET | Silicon MOSFET (P-channel) |
| Target Application | AC-DC adapters, totem-pole PFC, motor drive, Class-D audio | High-power adapters, telecom rectifiers | Same as this part | Higher voltage GaN industrial converters | 40 V DC-DC converters | 60 V reverse-polarity protection, load switch |
Key Differentiators
- Co-packaged half-bridge with 1-3 nH power-loop inductance (vs Discrete GaN half-bridge)
- 650 V blocking voltage with 140 mΩ R_DS(on) (vs IGI60L5050B1MXUMA1 (600 V, 50 mΩ single switch))
- Zero reverse-recovery charge intrinsic to GaN HEMT (vs Silicon MOSFET half-bridge (e.g. IPB110P06LMATMA1))
Design Notes
The IGI65D1414A3MSXUMA1's switching performance depends critically on minimizing the high-frequency power loop inductance between the high-side and low-side FETs. Route the HS-DRAIN, SW, and LS-SOURCE pads directly to the DC-link and output capacitors using the shortest possible traces on the top layer, with the ceramic bypass capacitors mounted directly under the exposed pad. Estimated: keep the loop area below 0.5 cm² to achieve <5 nH total inductance, which is essential for clean GaN switching waveforms above 200 kHz.
GaN HEMTs require a dedicated gate-drive circuit referenced to the Kelvin-source pin to suppress source-inductance-induced turn-on losses. Do not use the power source (SW node) as the gate-drive return - this causes positive feedback during dV/dt transitions and can exceed V_GS(max). Estimated: a 1 nH source inductance combined with 50 V/ns dV/dt produces 50 V of gate bounce, far exceeding the typical ±10 V V_GS(max) rating. Use the Kelvin-source pads (pins 5 and 11) for the gate-driver ground return path.
The PG-TIQFN-32-1 package dissipates heat through the top-exposed thermal pad. Attach a small copper heat spreader (or thermal interface material to a heatsink) for applications dissipating above 3-5 W per FET. Estimated: at VIN=400 V, IOUT=5 A, fs=100 kHz, the half-bridge dissipates approximately 1.5 W conduction + 0.8 W switching loss per FET, requiring top-side thermal management for reliable operation above 85°C ambient. Avoid placing tall components near the thermal pad that would prevent heat spreader contact.
Compliance Information
RoHS compliance confirmed via Infineon product page. AEC-Q100 not applicable for discrete GaN power transistors in industrial/commercial applications. Halogen-free status not explicitly confirmed in verified data.
