IGLR70R200D2SXUMA1 vs ISC015N06NM5ATMA1 Comparison
Detailed side-by-side comparison of IGLR70R200D2SXUMA1 by Infineon and ISC015N06NM5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IGLR70R200D2SXUMA1
IGLR70R200D2SXUMA1 - 700V 9.3A GaN FET, 200mΞ© | Infineon
IGLR70R200D2SXUMA1 β Active
Specification Comparison
| Parameter | IGLR70R200D2SXUMA1 | ISC015N06NM5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.24 | $0.62 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | CoolGaN G5 | OptiMOS 5 |
| Channel Type | N-Channel | β |
| Technology | GaN HEMT (E-mode, enhancement-mode) | Trench MOSFET (OptiMOS 5) |
| Drain-Source Voltage (VDS) | 700 V | β |
| Continuous Drain Current (ID, Tc) | 9.3 A | β |
| Power Dissipation (PD, Tc) | 34 W | β |
| On-Resistance (RDS(on), max) | 200 mΞ© | β |
| Total Gate Charge (Qg) | 1.26 nC | β |
| Output Capacitance (Coss) | 91 pF | β |
| Reverse Transfer Capacitance (Crss) | 0.21 pF | β |
| Gate Threshold Voltage (VGS(th), typ) | 1.2 V | β |
| Operating Temperature Range | -40 Β°C to +150 Β°C | -55 C to +175 C |
| Package | PG-TSON-8-8 (surface mount, ThinPAK top-cooled) | PG-TDSON-8 (PQFN 5x6) Drain-Down |
| RoHS | Compliant | β |
| Polarity / Channel Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at TA=25C | β | 33 A |
| Pulsed Drain Current (IDM) at TC=25C | β | 259 A |
| On-Resistance RDS(on) typical at VGS=10V | β | 1.5 mOhm |
| Total Power Dissipation (TA) | β | 3 W |
| Total Power Dissipation (TC) | β | 188 W |
| Mounting Type | β | Surface Mount |
| RoHS Status | β | Compliant |
| MSL (Moisture Sensitivity Level) | β | 1 |