IPB019N08N3GATMA1 vs IRF3007STRLPBF Comparison

Detailed side-by-side comparison of IPB019N08N3GATMA1 by Infineon and IRF3007STRLPBF by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPB019N08N3GATMA1 IRF3007STRLPBF
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.74 $0.92
Manufacturer Infineon Technologies
Series OptiMOS 3
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain-to-Source Voltage (Vdss) 80 V
Continuous Drain Current (Id) @ Tc=25°C 180 A
Power Dissipation (Pd) @ Tc=25°C 300 W
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ
Gate Threshold Voltage (Vgs(th)) 3.5 V
Drive Voltage (Rds On Max) 6 V, 10 V
Total Gate Charge (Qg) @ VGS=10V 206 nC
Input Capacitance (Ciss) 14.2 nF
Output Capacitance (Coss) 3.84 nF
Reverse Transfer Capacitance (Crss) 3.84 nF
Operating Temperature Range -55 °C to +175 °C
Package PG-TO263-7 (D2PAK-6, surface mount)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant Compliant (Lead-Free, PBF suffix)
Polarity N-Channel
MOSFET Operating Mode Enhancement
Drain-to-Source Breakdown Voltage (V(BR)DSS) 75 V
Continuous Drain Current (Id) at Tc=25°C 62 A
Pulsed Drain Current (Idm) 250 A
Static Drain-to-Source On-Resistance (RDS(on)) 12.6 mΩ typical at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) 2.0 V to 4.0 V
Total Gate Charge (Qg) 110 nC typical
Maximum Power Dissipation (Pd) 120 W at Tc=25°C
Operating Junction Temperature -55°C to +175°C
Thermal Resistance Junction-to-Case (RθJC) 1.0 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) 40 °C/W
Package Type D2PAK (TO-263), 3-pin (2+Tab), Surface Mount
Avalanche Rated Yes (Repetitive Avalanche Allowed up to Tjmax)

Datasheets & Resources

Browse All Products Create BOM Request Quote