IPB019N08N3GATMA1 vs IRF3007STRLPBF Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci IPB019N08N3GATMA1 disebabkan oleh Infineon dan IRF3007STRLPBF disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr IPB019N08N3GATMA1 IRF3007STRLPBF
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 3 —
FET Type N-Channel —
Technology MOSFET (Metal Oxide) —
Drain-to-Source Voltage (Vdss) 80 V —
Continuous Drain Current (Id) @ Tc=25°C 180 A —
Power Dissipation (Pd) @ Tc=25°C 300 W —
On-Resistance RDS(on) Max @ VGS=10V 1.9 mΩ —
Gate Threshold Voltage (Vgs(th)) 3.5 V —
Drive Voltage (Rds On Max) 6 V, 10 V —
Total Gate Charge (Qg) @ VGS=10V 206 nC —
Input Capacitance (Ciss) 14.2 nF —
Output Capacitance (Coss) 3.84 nF —
Reverse Transfer Capacitance (Crss) 3.84 nF —
Gambaran Suhu Operasi -55 °C to +175 °C —
Kemasan PG-TO263-7 (D2PAK-6, surface mount) —
Jenis Pemasangan Surface Mount Surface Mount
Status RoHS Compliant Compliant (Lead-Free, PBF suffix)
Polarity — N-Channel
MOSFET Operating Mode — Enhancement
Drain-to-Source Breakdown Voltage (V(BR)DSS) — 75 V
Continuous Drain Current (Id) at Tc=25°C — 62 A
Pulsed Drain Current (Idm) — 250 A
Static Drain-to-Source On-Resistance (RDS(on)) — 12.6 mΩ typical at VGS=10V
Gate-to-Source Threshold Voltage (VGS(th)) — 2.0 V to 4.0 V
Total Gate Charge (Qg) — 110 nC typical
Maximum Power Dissipation (Pd) — 120 W at Tc=25°C
Suhu Hubungan Operasi — -55°C to +175°C
Thermal Resistance Junction-to-Case (RθJC) — 1.0 °C/W
Thermal Resistance Junction-to-Ambient (RθJA) — 40 °C/W
Package Type — D2PAK (TO-263), 3-pin (2+Tab), Surface Mount
Avalanche Rated — Yes (Repetitive Avalanche Allowed up to Tjmax)

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