IPB120P04P404ATMA2 vs IPB120P04P404ATMA1 Comparison
Detailed side-by-side comparison of IPB120P04P404ATMA2 by Infineon and IPB120P04P404ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
IPB120P04P404ATMA2 ✓ Active
Specification Comparison
| Parameter | IPB120P04P404ATMA2 | IPB120P04P404ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB120P04P404ATMA2 | — |
| Series | OptiMOS-P2 | — |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ Tc=25C | 120 A | — |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | 3.8 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) @ VGS=-10V | 205 nC | — |
| Input Capacitance (Ciss) @ VDS=25V | 14,790 pF | — |
| Power Dissipation (PD) @ Tc=25C | 136 W | — |
| Operating Temperature Range | -55 C to +175 C (TJ) | — |
| Package | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount |
| Mounting Type | Surface Mount | Surface Mount (D2PAK, exposed tab) |
| Pin Count | 3 (Tab + 2 Leads) | — |
| RoHS Status | Compliant | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) | — | 3.5 mΩ at VGS = -10 V, ID = -100 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | -4 V at ID = -340 µA (max) |
| Total Gate Charge (Qg) | — | 205 nC at VGS = -10 V |
| Reverse Transfer Capacitance (Crss) | — | 14.79 nF at 25 V |
| Continuous Power Dissipation (PD) at Tc | — | 136 W |
| Single-Pulse Avalanche Energy (EAS) | — | 78 mJ |
| Operating Junction Temperature | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| MSL Level | — | MSL1 (260 °C peak reflow) |
| AEC-Q100/101 Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100 % avalanche tested |
| RoHS / Green | — | Green package, RoHS compliant |