IPB120P04P404ATMA2 vs IPB120P04P404ATMA1 Perbandingan
Perbandingan bersamaan detil IPB120P04P404ATMA2 dari Infineon dan IPB120P04P404ATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.
Infineon
IPB120P04P404ATMA2 - 40V P-Channel 120A OptiMOS MOSFET | Infineon
IPB120P04P404ATMA2 ✓ Aktif
Perbandingan Spesifikasi
| Parameter Umum | IPB120P04P404ATMA2 | IPB120P04P404ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| Manufacturer | Infineon Technologies | — |
| Part Number | IPB120P04P404ATMA2 | — |
| Series | OptiMOS-P2 | — |
| FET Type | P-Channel | P-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide), Enhancement Mode, OptiMOS-P2 |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) @ Tc=25C | 120 A | — |
| On-Resistance (RDS(on)) @ VGS=-10V, ID=-100A | 3.8 mOhm | — |
| Gate-Source Voltage (VGS) max | +/-20 V | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical value] | — |
| Total Gate Charge (Qg) @ VGS=-10V | 205 nC | — |
| Input Capacitance (Ciss) @ VDS=25V | 14,790 pF | — |
| Power Dissipation (PD) @ Tc=25C | 136 W | — |
| Rentang Suhu Kerja | -55 C to +175 C (TJ) | — |
| Paket | PG-TO263-3-2 (D2PAK) | PG-TO263-3 (D2PAK), 3-pin (2 + tab), surface mount |
| Tipe Mounting | Surface Mount | Surface Mount (D2PAK, exposed tab) |
| Jumlah Pin | 3 (Tab + 2 Leads) | — |
| Status RoHS | Compliant | — |
| Drain-to-Source Voltage (VDS) | — | 40 V |
| Continuous Drain Current (ID) at Tc | — | 120 A |
| Pulsed Drain Current (IDM) | — | [DATA_NEEDED: pulsed drain current] |
| On-State Resistance (RDS(on)) | — | 3.5 mΩ at VGS = -10 V, ID = -100 A |
| Gate-Source Threshold Voltage (VGS(th)) | — | -4 V at ID = -340 µA (max) |
| Total Gate Charge (Qg) | — | 205 nC at VGS = -10 V |
| Reverse Transfer Capacitance (Crss) | — | 14.79 nF at 25 V |
| Continuous Power Dissipation (PD) at Tc | — | 136 W |
| Single-Pulse Avalanche Energy (EAS) | — | 78 mJ |
| Suhu Hubung Kerja | — | -55 °C to +175 °C |
| Storage Temperature | — | [DATA_NEEDED: storage temperature range] |
| Level MSL | — | MSL1 (260 °C peak reflow) |
| AEC-Q100/101 Qualification | — | AEC-Q101 qualified |
| Avalanche Tested | — | 100 % avalanche tested |
| RoHS / Green | — | Green package, RoHS compliant |