IPC100N04S51R7ATMA1 vs IPB100N04S4H2ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S51R7ATMA1 by Infineon and IPB100N04S4H2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S51R7ATMA1
IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon
IPC100N04S51R7ATMA1 β ActiveInfineon
IPB100N04S4H2ATMA1 - 40V 100A OptiMOS-T2 N-Channel MOSFET | Infineon
IPB100N04S4H2ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S51R7ATMA1 | IPB100N04S4H2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.82 | $1.42 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS-5 | β |
| Transistor Type | N-Channel MOSFET, Enhancement Mode | β |
| Drain-Source Voltage VDS | 40 V | β |
| Continuous Drain Current ID | 100 A (at TC) | β |
| Pulsed Drain Current IDM | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage VGS | [DATA_NEEDED: VGS max rating] | β |
| Gate Threshold Voltage VGS(th) | [DATA_NEEDED: VGS(th) value] | β |
| On-Resistance RDS(on) | [DATA_NEEDED: RDS(on) at VGS=10V] | β |
| Total Gate Charge Qg | [DATA_NEEDED: total gate charge] | β |
| Power Dissipation PD | 115 W (at TC) | β |
| Thermal Resistance RthJC | 1.3 K/W | β |
| Operating Junction Temperature | -55 Β°C to +175 Β°C | -55C to +175C |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-TO263-3-2 (D2PAK-2) Surface Mount |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260 Β°C peak reflow) | MSL1 (up to 260C peak reflow) |
| AEC-Q101 Qualified | Yes | β |
| Avalanche Tested | 100% tested | β |
| RoHS Status | Compliant (Green Product) | β |
| Built-in Body Diode | Yes | β |
| FET Type | β | N-Channel, Enhancement Mode |
| Technology | β | OptiMOS-T2 (trench gate) |
| Drain-Source Voltage (VDS) | β | 40 V |
| Continuous Drain Current (ID) at TC=25C | β | 100 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current] |
| Gate-Source Voltage (VGS) | β | [DATA_NEEDED: max VGS rating] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typical] |
| RDS(on) at VGS=10V | β | 2.4 mΞ© typical |
| Maximum Power Dissition (PD) at TC=25C | β | 115 W |
| Storage Temperature | β | [DATA_NEEDED: storage temp range] |
| Avalanche Energy (EAS) | β | 100% avalanche tested |
| Automotive Qualification | β | AEC-Q101 qualified |
| RoHS Compliance | β | Compliant (Green Product) |