IPC100N04S51R7ATMA1 vs IPB100N04S4H2ATMA1 对比

详细并排对比 IPC100N04S51R7ATMA1 出自 Infineon 和 IPB100N04S4H2ATMA1 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

Infineon
IPC100N04S51R7ATMA1 IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 - 40V 100A OptiMOS-5 N-FET | Infineon

IPC100N04S51R7ATMA1 ✓ 量产中

规格对比

参数 IPC100N04S51R7ATMA1 IPB100N04S4H2ATMA1
品牌 Infineon Infineon
分类 MOSFETs MOSFETs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $0.82 $1.42
Manufacturer Infineon Technologies —
Series OptiMOS-5 —
晶体管类型 N-Channel MOSFET, Enhancement Mode —
Drain-Source Voltage VDS 40 V —
Continuous Drain Current ID 100 A (at TC) —
Pulsed Drain Current IDM [DATA_NEEDED: pulsed drain current] —
Gate-Source Voltage VGS [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage VGS(th) [DATA_NEEDED: VGS(th) value] —
On-Resistance RDS(on) [DATA_NEEDED: RDS(on) at VGS=10V] —
Total Gate Charge Qg [DATA_NEEDED: total gate charge] —
Power Dissipation PD 115 W (at TC) —
Thermal Resistance RthJC 1.3 K/W —
工作结温 -55 °C to +175 °C -55C to +175C
封装 PG-TDSON-8-34 (SS08 leadless) PG-TO263-3-2 (D2PAK-2) Surface Mount
安装类型 Surface Mount Surface Mount
MSL 等级 MSL1 (260 °C peak reflow) MSL1 (up to 260C peak reflow)
AEC-Q101 Qualified Yes —
Avalanche Tested 100% tested —
RoHS 状态 Compliant (Green Product) —
Built-in Body Diode Yes —
FET Type — N-Channel, Enhancement Mode
Technology — OptiMOS-T2 (trench gate)
Drain-Source Voltage (VDS) — 40 V
Continuous Drain Current (ID) at TC=25C — 100 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current]
Gate-Source Voltage (VGS) — [DATA_NEEDED: max VGS rating]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typical]
RDS(on) at VGS=10V — 2.4 mΩ typical
Maximum Power Dissition (PD) at TC=25C — 115 W
Storage Temperature — [DATA_NEEDED: storage temp range]
Avalanche Energy (EAS) — 100% avalanche tested
Automotive Qualification — AEC-Q101 qualified
RoHS Compliance — Compliant (Green Product)

数据手册与资源

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