IPC100N04S52R8ATMA1 vs IPC70N04S5L4R2ATMA1 Comparison
Detailed side-by-side comparison of IPC100N04S52R8ATMA1 by Infineon and IPC70N04S5L4R2ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S52R8ATMA1
IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
IPC100N04S52R8ATMA1 β ActiveInfineon
IPC70N04S5L4R2ATMA1
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S52R8ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $0.78 |
| Polarity | N-Channel | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID, Tc=25C) | 100 A | β |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | β |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | β |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | β |
| Power Dissipation (PD, Tc=25C) | 75 W | β |
| Operating Junction Temperature | -55C to +175C | β |
| Package | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-34 (Surface Mount) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | 1 (260C peak reflow) | MSL1 (up to 260Β°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% (per Infineon standard) | 100% (60 A production test) |
| RoHS / Green Product | Yes (RoHS compliant) | β |
| FET Type | β | N-Channel |
| Technology | β | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | β | 40 V |
| Continuous Drain Current (Id) @ Tc=25Β°C | β | 70 A |
| Power Dissipation (Pd) @ Tc=25Β°C | β | 50 W |
| R_DS(on) Max @ Vgs=10V | β | 4.2 mΞ© (typ) |
| Gate Threshold (Vgs(th)) | β | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | β | 4.5 V |
| Operating Temperature (Tj) | β | -55Β°C to +175Β°C |
| RoHS Status | β | Compliant (Green Product) |
| Configuration | β | Single with Built-in Diode |
| Case Connection | β | DRAIN |