IPC100N04S52R8ATMA1 vs IPC70N04S5L4R2ATMA1 Сравнение
Подробное сравнение бок о бок IPC100N04S52R8ATMA1 от Infineon и IPC70N04S5L4R2ATMA1 от Infineon. Сравните ключевые характеристики, электрические параметры, упаковку, статус жизненного цикла, цены и наличие, чтобы выбрать лучший компонент для ваших требований.
Infineon
IPC100N04S52R8ATMA1 - 40V 100A N-Ch OptiMOS MOSFET | Infineon
IPC100N04S52R8ATMA1 ✓ АктивенInfineon
IPC70N04S5L4R2ATMA1 - 40V 70A OptiMOS 5 N-Ch MOSFET | Infineon
IPC70N04S5L4R2ATMA1 ✓ АктивенСравнение характеристик
| Параметр | IPC100N04S52R8ATMA1 | IPC70N04S5L4R2ATMA1 |
|---|---|---|
| Бренд | Infineon | Infineon |
| Категория | MOSFETs | MOSFETs |
| Статус жизненного цикла | Активен | Активен |
| Наличие | In Stock | In Stock |
| Цена за единицу (USD) | $1,18 | $0,78 |
| Polarity | N-Channel | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID, Tc=25C) | 100 A | — |
| Continuous Drain Current (ID, Tc=100C) | [DATA_NEEDED: ID at Tc=100C] | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typical] | — |
| On-State Resistance RDS(on) typ @ VGS=10V | 2.8 mOhm | — |
| On-State Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max] | — |
| Power Dissipation (PD, Tc=25C) | 75 W | — |
| Рабочая температура перехода | -55C to +175C | — |
| Корпус | PG-TDSON-8-34 (TDSON-8 EP) | PG-TDSON-8-34 (Surface Mount) |
| Тип монтажа | Surface Mount | Surface Mount |
| Уровень MSL | 1 (260C peak reflow) | MSL1 (up to 260°C peak reflow) |
| Automotive Qualification | AEC-Q101 qualified | AEC-Q101 |
| Avalanche Tested | 100% (per Infineon standard) | 100% (60 A production test) |
| RoHS / Green Product | Yes (RoHS compliant) | — |
| FET Type | — | N-Channel |
| Technology | — | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | — | 40 V |
| Continuous Drain Current (Id) @ Tc=25°C | — | 70 A |
| Power Dissipation (Pd) @ Tc=25°C | — | 50 W |
| R_DS(on) Max @ Vgs=10V | — | 4.2 mΩ (typ) |
| Gate Threshold (Vgs(th)) | — | Logic Level (4.5 V max Rds On, Min Rds On) |
| Drive Voltage (Max Rds On, Min Rds On) | — | 4.5 V |
| Operating Temperature (Tj) | — | -55°C to +175°C |
| Статус RoHS | — | Compliant (Green Product) |
| Configuration | — | Single with Built-in Diode |
| Case Connection | — | DRAIN |