IPC100N04S5L1R5ATMA1 vs IAUA220N08S5N021AUMA1 Comparison
Detailed side-by-side comparison of IPC100N04S5L1R5ATMA1 by Infineon and IAUA220N08S5N021AUMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 β ActiveInfineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 β ActiveSpecification Comparison
| Parameter | IPC100N04S5L1R5ATMA1 | IAUA220N08S5N021AUMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1.18 | $2.45 |
| Manufacturer | Infineon Technologies | β |
| Product Family | OptiMOS-5 40 V | β |
| Polarity / Channel Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) Max | 40 V | β |
| Gate-Source Voltage (VGS) Max | 20 V | β |
| Continuous Drain Current (ID) at Tc=25C | 100 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | β |
| Power Dissipation (PD) at Tc=25C | 115 W | β |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | β |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | β |
| Operating Temperature Range | -55C to +175C | -55C to +175C (Tj) |
| Package | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-4 (7x8 mmΒ²) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL moisture sensitivity level] |
| AEC-Q101 Qualified | Yes | β |
| RoHS Status | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | β |
| Technology | β | OptiMOS-5 (75V-120V family) |
| Drain-Source Voltage (V_DS max) | β | 80 V |
| Continuous Drain Current (I_D, Tj) | β | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | β | 2.1 mΞ© at 10 V V_GS |
| Power Dissipation (P_D, Tc) | β | 211 W |
| Gate-Source Voltage (V_GS max) | β | [DATA_NEEDED: V_GS max absolute rating] |
| Gate Threshold Voltage (V_GS(th)) | β | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Channel Type | β | N-Channel |
| Automotive Qualification | β | AEC-Q101 qualified |
| Total Gate Charge (Q_g) | β | [DATA_NEEDED: Q_g typical at V_GS=10V] |
| Output Capacitance (C_oss) | β | [DATA_NEEDED: C_oss typical] |
| Thermal Resistance (R_thJC) | β | [DATA_NEEDED: junction-to-case thermal resistance] |