IPC100N04S5L1R5ATMA1 vs IAUA220N08S5N021AUMA1 Comparación
Comparación detallada lado a lado de IPC100N04S5L1R5ATMA1 por Infineon y IAUA220N08S5N021AUMA1 por Infineon. Compare las especificaciones clave, los parámetros eléctricos, el encapsulado, el estado del ciclo de vida, los precios y la disponibilidad para determinar el mejor componente para los requisitos de su diseño.
Infineon
IPC100N04S5L1R5ATMA1 - 40V 100A OptiMOS-5 N-MOSFET | Infineon
IPC100N04S5L1R5ATMA1 ✓ ActivoInfineon
IAUA220N08S5N021AUMA1 - 80V, 220A OptiMOS-5 N-MOSFET | Infineon
IAUA220N08S5N021AUMA1 ✓ ActivoComparación de especificaciones
| Parámetro | IPC100N04S5L1R5ATMA1 | IAUA220N08S5N021AUMA1 |
|---|---|---|
| Marca | Infineon | Infineon |
| Categoría | MOSFETs | MOSFETs |
| Estado del ciclo de vida | Activo | Activo |
| Estado del stock | In Stock | In Stock |
| Precio unitario (USD) | $1,18 | $2,45 |
| Manufacturer | Infineon Technologies | — |
| Product Family | OptiMOS-5 40 V | — |
| Polarity / Channel Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) Max | 40 V | — |
| Gate-Source Voltage (VGS) Max | 20 V | — |
| Continuous Drain Current (ID) at Tc=25C | 100 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: IDM] | — |
| Power Dissipation (PD) at Tc=25C | 115 W | — |
| On-Resistance RDS(on) at VGS=10 V | 1.5 mOhm (typ) | — |
| On-Resistance RDS(on) at VGS=4.5 V | 1.8 mOhm (typ) | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ] | — |
| Rango de temperatura de funcionamiento | -55C to +175C | -55C to +175C (Tj) |
| Encapsulado | PG-TDSON-8-34 (SS08 leadless) | PG-HSOF-5-4 (7x8 mm²) |
| Tipo de montaje | Surface Mount | Surface Mount |
| Nivel MSL | MSL1 (260C peak reflow) | [DATA_NEEDED: MSL moisture sensitivity level] |
| AEC-Q101 Qualified | Yes | — |
| Estado RoHS | Compliant (Green Product) | Compliant |
| Avalanche Tested | 100% | — |
| Technology | — | OptiMOS-5 (75V-120V family) |
| Drain-Source Voltage (V_DS max) | — | 80 V |
| Continuous Drain Current (I_D, Tj) | — | 220 A |
| Static Drain-Source On-Resistance (R_DS(on)) | — | 2.1 mΩ at 10 V V_GS |
| Power Dissipation (P_D, Tc) | — | 211 W |
| Gate-Source Voltage (V_GS max) | — | [DATA_NEEDED: V_GS max absolute rating] |
| Gate Threshold Voltage (V_GS(th)) | — | [DATA_NEEDED: V_GS(th) typical/min/max] |
| Channel Type | — | N-Channel |
| Automotive Qualification | — | AEC-Q101 qualified |
| Total Gate Charge (Q_g) | — | [DATA_NEEDED: Q_g typical at V_GS=10V] |
| Output Capacitance (C_oss) | — | [DATA_NEEDED: C_oss typical] |
| Thermal Resistance (R_thJC) | — | [DATA_NEEDED: junction-to-case thermal resistance] |