IPC50N04S5L5R5ATMA1 vs BSC019N04LSTATMA1 Comparison

Detailed side-by-side comparison of IPC50N04S5L5R5ATMA1 by Infineon and BSC019N04LSTATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter IPC50N04S5L5R5ATMA1 BSC019N04LSTATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Transistor Type N-Channel MOSFET —
Mode Enhancement Mode —
Drain-Source Voltage (VDS) 40 V 40 V
Continuous Drain Current (ID, Tc) 50 A —
Maximum Drain Current (silicon-limited, 25 °C) 60 A —
On-Resistance RDS(on) max @ VGS=10 V 5.5 mΩ —
Gate Threshold VGS(th) Logic Level (enhancement at ≤ 4.5 V VGS) —
Power Dissipation (Tc) 42 W —
Thermal Resistance Junction-to-Case RthJC 3.6 K/W —
Operating Temperature Range -55 °C to +175 °C -55 C to +150 C
Package PG-TDSON-8-33 (TDSON EP 8-pin, exposed pad) TDSON-8 (SuperSO8) 5x6 mm
Mounting Type Surface Mount Surface Mount
AEC-Q101 Qualification Qualified (automotive grade) —
MSL (Moisture Sensitivity Level) MSL1 —
Peak Reflow Temperature 260 °C —
Avalanche Rating 100 % Avalanche Tested —
RoHS / REACH RoHS Compliant (Green Product) —
Technology — OptiMOS 5 (N-channel trench MOSFET)
Continuous Drain Current (ID, Tc=25C) — 161 A
Continuous Drain Current (ID, Ta=25C) — 28 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed ID limit]
On-Resistance RDS(on) max @ VGS=10V — 1.9 mOhm
On-Resistance RDS(on) max @ VGS=4.5V — [DATA_NEEDED: RDS(on) at 4.5V]
Gate Threshold Voltage VGS(th) typ — 1.7 V
Total Gate Charge Qg typ — 85 nC
Power Dissipation PD (Tc=25C) — 94 W
MSL Level — 1 (unlimited)
RoHS Status — Compliant
Lead-Free / Halogen-Free — Yes / Yes
Avalanche Rated — Yes

Datasheets & Resources

Browse All Products Create BOM Request Quote