IPC90N04S5L3R3ATMA1 vs IAUC60N06S5L073ATMA1 Comparison
Detailed side-by-side comparison of IPC90N04S5L3R3ATMA1 by Infineon and IAUC60N06S5L073ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
IPC90N04S5L3R3ATMA1
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 β ActiveInfineon
IAUC60N06S5L073ATMA1
IAUC60N06S5L073ATMA1 - 60V 60A OptiMOS 5 MOSFET | Infineon
IAUC60N06S5L073ATMA1 β ActiveSpecification Comparison
| Parameter | IPC90N04S5L3R3ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.96 | $0.41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | β |
| FET Type | N-Channel, Enhancement Mode | β |
| Drain-Source Voltage (VDS) | 40 V | β |
| Continuous Drain Current (ID) at TC=25Β°C | 90 A | β |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΞ© | β |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | β |
| Gate-Source Voltage (VGS) max | Β±20 V | β |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | β |
| Total Power Dissipation (TC=25Β°C) | 62 W | β |
| Operating Junction Temperature | -55Β°C to +175Β°C | β |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | β |
| Package | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-33 (5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | β |
| Peak Reflow Temperature | 260Β°C | β |
| Qualification | AEC-Q101 automotive qualified | AEC-Q101 automotive grade |
| Avalanche Tested | 100% (production-level) | β |
| RoHS Compliance | Compliant (Green Product) | β |
| Series | β | OptiMOS 5 |
| Transistor Type | β | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | β | 60 V |
| Continuous Drain Current (ID) at Tj | β | 60 A |
| On-Resistance RDS(on) max | β | 7.3 mΞ© |
| Total Gate Charge (QG) | β | 17.4 nC |
| Power Dissipation (PD) at Tc | β | 52 W |
| Operating Temperature Range | β | -55C to +175C |
| Technology | β | Trench (OptiMOS 5) |
| Number of Pins | β | 8 |
| Configuration | β | Single N-Channel |
| RoHS Status | β | Compliant |
| MSL Level | β | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | β | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RΞΈJA | β | [DATA_NEEDED: thermal resistance junction-to-ambient] |