IPC90N04S5L3R3ATMA1 vs IAUC60N06S5L073ATMA1 Vergleich
Detaillierter Direktvergleich von IPC90N04S5L3R3ATMA1 von Infineon und IAUC60N06S5L073ATMA1 von Infineon. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Infineon
IPC90N04S5L3R3ATMA1 - 40V 90A OptiMOS N-Channel MOSFET | Infineon
IPC90N04S5L3R3ATMA1 ✓ AktivSpezifikationsvergleich
| Parameter | IPC90N04S5L3R3ATMA1 | IAUC60N06S5L073ATMA1 |
|---|---|---|
| Marke | Infineon | Infineon |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,96 | $0,41 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Product Family | OptiMOS 5 40V | — |
| FET Type | N-Channel, Enhancement Mode | — |
| Drain-Source Voltage (VDS) | 40 V | — |
| Continuous Drain Current (ID) at TC=25°C | 90 A | — |
| On-Resistance RDS(on) max at VGS=10V | 3.3 mΩ | — |
| On-Resistance RDS(on) at VGS=4.5V | [DATA_NEEDED: RDS(on) at VGS=4.5V] | — |
| Gate-Source Voltage (VGS) max | ±20 V | — |
| Gate Threshold Voltage VGS(th) | 1.7 V to 2.7 V (logic level) | — |
| Total Power Dissipation (TC=25°C) | 62 W | — |
| Betriebs-Sperrschichttemperatur | -55°C to +175°C | — |
| Storage Temperature Range | [DATA_NEEDED: storage temp range] | — |
| Gehäuse | PG-TDSON-8-34 (TDSON-8) | PG-TDSON-8-33 (5x6 mm) |
| Montageart | Surface Mount | Surface Mount |
| MSL Moisture Sensitivity | MSL1 (per JEDEC J-STD-020) | — |
| Peak Reflow Temperature | 260°C | — |
| Qualification | AEC-Q101 automotive qualified | AEC-Q101 automotive grade |
| Avalanche Tested | 100% (production-level) | — |
| RoHS Compliance | Compliant (Green Product) | — |
| Series | — | OptiMOS 5 |
| Transistortyp | — | N-Channel MOSFET |
| Drain-to-Source Voltage (VDS) | — | 60 V |
| Continuous Drain Current (ID) at Tj | — | 60 A |
| On-Resistance RDS(on) max | — | 7.3 mΩ |
| Total Gate Charge (QG) | — | 17.4 nC |
| Power Dissipation (PD) at Tc | — | 52 W |
| Betriebstemperaturbereich | — | -55C to +175C |
| Technology | — | Trench (OptiMOS 5) |
| Anzahl der Pins | — | 8 |
| Configuration | — | Single N-Channel |
| RoHS-Status | — | Compliant |
| MSL-Level | — | [DATA_NEEDED: MSL level] |
| Gate Threshold Voltage VGS(th) typ | — | [DATA_NEEDED: VGS(th) typical] |
| Thermal Resistance RθJA | — | [DATA_NEEDED: thermal resistance junction-to-ambient] |